Schottky Barrier Diode Edge Structure for Leakage Current Blocking
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Solution Overview
Problem
Existing Schottky barrier diodes (SBDs) suffer from high leakage current due to irregularities in metal-semiconductor interfaces and crystal defects, leading to unwanted power loss and heat generation, which current manufacturing techniques fail to adequately address.
Innovation Solution
The implementation of a resist protection structure overlapping semiconductor material and edge shallow trench isolation, combined with high dosage p-type or n-type impurity implantation at the edge semiconductor material and boundary STI structure, to reduce leakage current and enhance on-current conditions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If conventional manufacturing techniques are used for Schottky barrier diodes, then the device structure is simple and manufacturing is easier, but leakage current is high leading to power loss and heat generation
Solution Approach 1:
The patent segments the semiconductor device into multiple functional regions: a first well region with first conductivity type, a second well region with second conductivity type, and a third well region with third conductivity type. This segmentation creates distinct functional zones that collectively reduce leakage current through multiple mechanisms operating in different regions, resolving the contradiction between energy loss reduction and device complexity.
Solution Approach 2:
The patent applies local quality by creating regions with different conductivity types and doping concentrations at specific locations. The first well, second well, and third well regions have locally optimized properties: the first well provides primary current blocking, the second well enhances edge termination, and the third well provides additional leakage suppression. This localized optimization reduces overall leakage current while maintaining manufacturability.
2Reliability
If additional well regions and complex doping processes are implemented, then leakage current is reduced, but manufacturing complexity increases
Solution Approach 1:
The patent employs preliminary action through pre-defined doping profiles and well formation sequences. The first well, second well, and third well regions are formed in a predetermined order with specific doping concentrations and depths established in advance. This preliminary planning of the doping architecture enables systematic leakage current reduction while maintaining manufacturing feasibility through standardized process sequences.
Solution Approach 2:
The patent utilizes parameter changes by varying doping concentrations, well depths, and conductivity types across different regions. The first well has a first doping concentration, the second well has a second doping concentration, and the third well has a third doping concentration, with each parameter optimized to address specific leakage pathways. These controlled parameter variations enable tailored leakage suppression while using conventional doping processes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach significantly reduces leakage current by up to a factor of 1000, improving the yield and reducing power consumption, making the SBDs more suitable for mobile and battery-powered devices.
Implementation Method 1
high dosage p-type or n-type impurity implantation at the edge semiconductor material and boundary STI structure
Data Source
AI summary
Embodiments include a Schottky barrier diode (SBD) structure and method of forming the same, the SBD structure including a current blockage feature to inhibit current from leaking at an interface with a shallow trench isolation regions surrounding an anode region of the SBD structure.