Schottky Diode Guardring Structure for Higher Breakdown Voltage
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Solution Overview
Problem
There is a need to enhance the breakdown voltages of Schottky diodes for high voltage applications, as existing technologies do not effectively address this requirement.
Innovation Solution
A Schottky diode device is designed with a buried oxide layer on a substrate, featuring a first region with graded doping concentration, ring regions acting as guardrings, and terminal regions connected to the anode and cathode, with specific conductivity types to enhance breakdown voltage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional Schottky diode structures are used, then manufacturing is simple, but breakdown voltage is insufficient for high voltage applications
Solution Approach 1:
The device is segmented into multiple functional regions including a first region with graded doping concentration, first and second ring regions forming guard rings, and first and second terminal regions. This segmentation allows each region to perform its specific function optimally, achieving high breakdown voltage through the coordinated action of these divided structures.
Solution Approach 2:
Different regions of the device are assigned different doping concentrations and conductivity types to optimize local performance. The first region has graded doping concentration, while ring regions and terminal regions have specific conductivity types, creating local quality variations that enhance overall breakdown voltage and electrical characteristics.
2Reliability
If graded doping concentration is implemented, then breakdown voltage increases, but manufacturing precision requirements increase
Solution Approach 1:
The doping concentration in the first region is gradually changed from low to high, creating a graded profile that optimizes breakdown voltage. This parameter change approach allows for controlled transition of electrical properties across the device structure, achieving high voltage performance while managing manufacturing complexity.
Data Source
AI summary
A device includes a buried oxide layer disposed on a substrate, a first region disposed on the buried oxide layer and a first ring region disposed in the first region. The first ring region includes a portion of a guardring. The device further includes a first terminal region disposed in the first ring region, a second ring region disposed in the first region and a second terminal region disposed in the second ring region. The first terminal region is connected to an anode and the second terminal region is connected to a cathode. The first region has a graded doping concentration. The first region, the second ring region and the second terminal region have a first conductivity type, and the first ring region and the first terminal region have a second conductivity type. The first conductivity type is different from the second conductivity type.