Vertical Schottky Diode Structure Without Etching-Damaged Interfaces
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Solution Overview
Problem
The manufacturing of vertical Schottky diodes often results in damaged interfaces and the introduction of impurities during the etching process, which affects the reverse breakdown voltage and reliability of the device.
Innovation Solution
A semiconductor structure and method involving a first semiconductor layer with protrusions, a second semiconductor layer with matching conductivity type and lower doping concentration, and a third semiconductor layer with opposite conductivity type, where the second semiconductor layer is formed using epitaxial growth to avoid damage and impurity introduction, reducing the need for etching and enhancing interface integrity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Shape
If an etching process is used to form protrusions and recesses, then the desired structural shape is achieved, but the interface is damaged and impurities are introduced
Solution Approach 1:
The patent applies preliminary action by forming the protrusion and recess structures through selective epitaxial growth before subsequent processing steps. The second semiconductor layer is grown with specific patterns already in place, avoiding the need for damaging etching operations later. This preliminary formation of the desired shape through growth rather than removal prevents interface damage and impurity introduction.
Solution Approach 2:
The patent replaces the mechanical etching process with a chemical epitaxial growth process. Instead of using physical/chemical etching to remove material and create protrusions and recesses, the invention uses selective epitaxial growth to directly form the desired structures. This substitution of the material formation mechanism eliminates the harmful effects of etching on the semiconductor interface.
2Shape
If etching is performed to create the second recess, then the required geometric configuration is obtained, but interface damage occurs affecting reverse breakdown voltage
Solution Approach 1:
The second recess structure is formed preliminarily through selective epitaxial growth of the second semiconductor layer rather than through subsequent etching. The recess configuration is established during the growth process itself, ensuring that the interface is created in a controlled manner without the damage associated with etching operations.
Solution Approach 2:
The patent substitutes the etching mechanism with an epitaxial growth mechanism for forming the second recess. Instead of removing material to create the recess shape, the invention grows the semiconductor layer selectively to form the desired configuration, thereby maintaining interface integrity and avoiding manufacturing precision issues related to etching damage.
3Ease of manufacture
If conventional manufacturing methods are used, then production is simpler, but impurities are introduced at the interface reducing device reliability
Solution Approach 1:
The patent replaces the conventional etching-based manufacturing approach with an epitaxial growth-based approach. This substitution eliminates the impurity introduction problem while maintaining manufacturing feasibility. The selective epitaxial growth process provides a controlled method for forming complex structures without the harmful side effects of etching, thus improving device reliability without excessive complexity.
Solution Approach 2:
The patent changes the fundamental process parameter from etching (material removal) to epitaxial growth (material addition). This parameter change transforms the manufacturing mechanism to one that inherently protects against impurity introduction. By controlling the growth conditions and selectivity, the invention achieves both ease of manufacture and high reliability through a single process paradigm shift.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach prevents interface damage and impurity introduction, thereby improving the reverse breakdown voltage and reliability of the semiconductor structure.
Implementation Method 1
forming a second semiconductor layer covering the first surface, where second protrusions are formed at a surface of the second semiconductor layer away from the first semiconductor layer
Data Source
AI summary
The present disclosure provides a semiconductor structure and a manufacturing method of the semiconductor, including: a first semiconductor layer, where first protrusions are at a first surface of the first semiconductor layer; and a second semiconductor layer on the first semiconductor layer, where second protrusions are at a surface of the second semiconductor layer away from the first semiconductor layer, the second protrusions correspond to the first protrusions. A conductivity type of the second semiconductor layer is the same as a conductivity type of the first semiconductor layer, and a doping concentration of the second semiconductor layer is lower than a doping concentration of the first semiconductor layer. The third semiconductor layer is on the second semiconductor layer, and a conductivity type of the third semiconductor layer is opposite to the conductivity type of the first semiconductor layer.