Schottky Barrier Diode Interface Layout for Low Leakage Current
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Solution Overview
Problem
Existing Schottky barrier diodes suffer from high leakage current due to insufficient Schottky barrier height at the metal-semiconductor interface, often caused by defective contact and contamination during manufacturing, which affects process integration and device performance.
Innovation Solution
A method for manufacturing Schottky barrier diodes that involves sharing oxide layers with MOS transistors to improve process integration, using thermal treatments and selective etching to remove residual oxide layers, thereby maintaining low leakage current and reducing manufacturing costs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If Schottky barrier diodes are integrated with other semiconductor circuits using conventional processes, then manufacturing cost is reduced, but leakage current increases due to compromised electrical properties
Solution Approach 1:
A sacrificial oxide layer is formed on the semiconductor surface before metal deposition. This preliminary oxide layer prevents direct contamination and defective contact between metal and semiconductor during subsequent processing steps, thereby reducing leakage current while maintaining process integration
Solution Approach 2:
The sacrificial oxide layer acts as an intermediary between the metal and semiconductor. It is intentionally formed, then selectively removed in a controlled manner to expose clean semiconductor surface for metal contact, mediating the interface quality and preventing harmful direct contact contamination
2Productivity
If extensive process integration techniques are used to manufacture Schottky diodes, then manufacturing efficiency improves, but Schottky barrier height becomes insufficient leading to high leakage current
Solution Approach 1:
The sacrificial oxide layer is formed in advance before metal deposition and selective removal. This preliminary action ensures that the semiconductor surface is protected during high-efficiency processing, and the oxide can be selectively removed later to achieve precise Schottky barrier formation without compromising barrier height
Solution Approach 2:
The oxide layer thickness and selective removal parameters are optimized to maintain appropriate Schottky barrier height. By controlling oxide formation conditions and selective etching parameters, the barrier height is maintained at optimal levels even through extensive integration processes
3Device complexity
If metal region directly contacts semiconductor region without oxide layer, then manufacturing steps are reduced, but defective contact and contamination occur increasing leakage current
Solution Approach 1:
Instead of removing oxide before metal deposition (which would require extra steps), the oxide is intentionally formed as a sacrificial layer first, then metal is deposited on top. The oxide is subsequently selectively removed to create clean contact, actually simplifying the process by eliminating separate surface preparation steps
Solution Approach 2:
The sacrificial oxide serves as a temporary intermediary that protects the semiconductor during metal deposition. It is then selectively removed to enable direct metal-semiconductor contact, ensuring clean interfaces without requiring complex contamination control procedures
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method enhances Schottky diode performance by minimizing leakage current while maintaining efficient process integration, without increasing manufacturing costs or cycle time, thus improving device reliability and efficiency.
Implementation Method 1
using thermal treatments and selective etching to remove residual oxide layers
Implementation Method 2
using thermal treatments and selective etching to remove residual oxide layers
Data Source
AI summary
A semiconductor device includes: a first well region in a substrate; at least one isolation region arranged in the substrate and defining an anode area, a cathode area and a bulk area of a Schottky diode device in the first well region; a first dielectric layer over the first well region; and a conductive layer over the first well region, the conductive layer forming a Schottky barrier interface, of the Schottky diode device, with the first well region. The first dielectric layer includes: a first portion including a first thickness; a second portion including a second thickness less than the first thickness and laterally surrounded by the first portion; and a sidewall arranged directly over one of the at least one isolation region and connecting the first portion and the second portion.