Junction Barrier Schottky Diode Layout for Low Leakage and Forward Voltage
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Solution Overview
Problem
Junction barrier Schottky diodes experience high leakage current and forward voltage due to the introduction of a PN junction, which reduces the effective surface area and increases electric resistance.
Innovation Solution
The device includes an N-type semiconductor layer with first and second P-type doped areas, where the spacing between the second P-type doped areas is larger than that of the first, allowing for a conductive metal layer to cover both, thereby reducing leakage current and forward voltage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If a PN junction is introduced to create a junction barrier Schottky diode, then the barrier effect and depletion region are improved to reduce leakage current, but the effective SBD surface area is reduced and electric resistance increases causing higher forward voltage
Solution Approach 1:
The P-type doped areas are segmented into two distinct layers: a first P-type doped layer with smaller spacing and a second P-type doped layer with larger spacing. This segmentation allows each layer to perform different functions - the first layer provides barrier effect for leakage current reduction, while the second layer maintains larger spacing to preserve effective surface area and reduce forward voltage
Solution Approach 2:
Different regions of the P-type doped areas are assigned different local qualities through the two-layer structure. The first P-type doped layer has higher doping concentration and smaller spacing localized for barrier formation, while the second layer has larger spacing localized for maintaining surface area. This local differentiation resolves the contradiction between needing small spacing for barrier effect and large spacing for surface area
2Object-affected harmful factors
If a PN junction is introduced to create a junction barrier Schottky diode, then the barrier effect and depletion region are improved to reduce leakage current, but the electric resistance increases causing higher forward voltage
Solution Approach 1:
The P-type doped areas are segmented into two distinct layers: a first P-type doped layer with smaller spacing and a second P-type doped layer with larger spacing. This segmentation allows each layer to perform different functions - the first layer provides barrier effect for leakage current reduction, while the second layer maintains larger spacing to preserve effective surface area and reduce forward voltage
Solution Approach 2:
The spacing parameter is changed between the two P-type doped layers. The first layer uses smaller spacing (e.g., 5-15 μm) to create effective barrier regions, while the second layer uses larger spacing (e.g., 15-30 μm) to reduce electric resistance and forward voltage. This parameter differentiation resolves the contradiction between barrier effect and forward voltage
3Object-affected harmful factors
If smaller spacing between P-type doped areas is used to enhance barrier effect, then leakage current is reduced, but the effective surface area and power handling capability are reduced
Solution Approach 1:
The P-type doped areas are segmented into two distinct layers: a first P-type doped layer with smaller spacing and a second P-type doped layer with larger spacing. This segmentation allows each layer to perform different functions - the first layer provides barrier effect for leakage current reduction, while the second layer maintains larger spacing to preserve effective surface area and reduce forward voltage
Solution Approach 2:
Different regions of the P-type doped areas are assigned different local qualities through the two-layer structure. The first P-type doped layer has higher doping concentration and smaller spacing localized for barrier formation, while the second layer has larger spacing localized for maintaining surface area
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively shields the electric field in reverse bias conditions and maintains a wide Schottky diode area, reducing leakage current and forward voltage.
Implementation Method 1
an interface between the Schottky electrode and the semiconductor layer has a small work function generally for lowering forward voltage between metallic material composing the Schottky electrode and semiconductor material composing the semiconductor layer
Implementation Method 2
A Schottky barrier diode (i.e., SBD) includes a Schottky electrode, which contacts a semiconductor layer
Data Source
AI summary
A method for fabricating a junction barrier Schottky diode device is disclosed. The junction barrier Schottky device includes an N-type semiconductor layer, a plurality of first P-type doped areas, a plurality of second P-type doped areas, and a conductive metal layer. The first P-type doped areas and the second P-type doped are formed in the N-type semiconductor layer. The second P-type doped areas are self-alignedly formed above the first P-type doped areas. The spacing between every neighboring two of the second P-type doped areas is larger than the spacing between every neighboring two of the first P-type doped areas. The conductive metal layer, formed on the N-type semiconductor layer, covers the first P-type doped areas and the second P-type doped areas.