Integrated Schottky Diode and High-Voltage MOS Transistor ESD Protection
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Solution Overview
Problem
Electrostatic discharge (ESD) poses a significant threat to electronic components, causing damage and failure, and existing semiconductor structures lack effective protection mechanisms.
Innovation Solution
A semiconductor structure integrating a Schottky diode with high-voltage MOS transistors (NMOS or PMOS) and surrounding it with a doping region of low doping concentration to dissipate ESD current, while maintaining the driving capability of the MOS transistor and preventing Schottky diode leakage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a Schottky diode is integrated with high-voltage MOS transistors for ESD protection, then ESD current dissipation capability is improved, but Schottky diode leakage increases
Solution Approach 1:
The patent applies local quality by creating a doping region with a specific low doping concentration that locally surrounds the Schottky diode. This localized modification of doping concentration in the semiconductor substrate reduces the Schottky diode leakage without affecting the overall ESD protection capability. The low doping concentration region is specifically positioned to address the leakage issue at the Schottky diode interface.
Solution Approach 2:
The patent changes the doping concentration parameter in the semiconductor substrate to create a low doping concentration region surrounding the Schottky diode. This parameter change from high to low doping concentration in the specific region reduces the leakage current of the Schottky diode while maintaining the ESD protection function through the integrated structure.
2Reliability
If ESD protection structures are added to integrated circuits, then reliability against electrostatic discharge is improved, but device complexity increases
Solution Approach 1:
The patent merges the Schottky diode structure with the high-voltage MOS transistor structure into a single integrated semiconductor device. The Schottky diode is formed by combining the metal layer with the doped region in the semiconductor substrate, which is also part of the MOS transistor structure. This merging eliminates the need for separate ESD protection structures, thereby reducing overall device complexity while maintaining ESD protection capability.
Solution Approach 2:
The integrated semiconductor structure serves multiple functions: the Schottky diode provides ESD protection while the high-voltage MOS transistor performs switching or amplification functions. The low doping concentration region simultaneously reduces Schottky diode leakage and maintains proper electrical characteristics for both devices. This multi-functionality reduces the need for additional dedicated ESD protection structures.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Effectively dissipates ESD current, maintains the driving capability of high-voltage MOS transistors, and reduces Schottky diode leakage through structural and functional integration, also applicable with bipolar junction transistors and silicon controlled rectifiers.
Implementation Method 1
Electrostatic discharge (ESD) is the main cause of failure and damage of most electronic components
Implementation Method 2
an integrated semiconductor structure combining a Schottky diode with a high-voltage MOS transistor (NMOS or PMOS) to dissipate electrostatic discharge (ESD) current generated during operation of the device by the high-current characteristics of the Schottky diode
Implementation Method 3
the Schottky diode is surrounded by a doping region with a low doping concentration and a large doping range to reduce the possibility of the leakage of the Schottky diode
Data Source
AI summary
A semiconductor structure is provided. The semiconductor structure includes a substrate, a metal layer, a gate, a drain, a source and a first doping region. The substrate has a first doping type. The metal layer is adjacent to the surface of the substrate. The gate is formed on the substrate. The drain is formed in the substrate and located at one side of the gate. The drain is adjacent to the metal layer. The source is formed in the substrate and located at another side of the gate. The first doping region is formed in the substrate and surrounds the metal layer and the drain. The first doping region has a second doping type. The second doping type is different from the first doping type.