Schottky Barrier Diode Peripheral Contact Electrode
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Solution Overview
Problem
Schottky barrier diodes face challenges in achieving miniaturization while reducing forward voltage, as increasing the semiconductor layer area leads to larger components that do not meet market demands, and decreasing the area results in increased resistance and forward voltage.
Innovation Solution
The Schottky barrier diode design includes a contact electrode layer on the peripheral region of the semiconductor layer, electrically connected to the diode region and second electrode layer, reducing the resistance value in the current path and minimizing the need to increase the semiconductor layer area, thereby achieving miniaturization and lower forward voltage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If the semiconductor layer area is increased to reduce forward voltage, then the forward voltage decreases, but the component size increases and does not meet miniaturization demands
Solution Approach 1:
The patent applies local quality by creating a guard ring region with different impurity concentration (higher n-type impurity concentration) surrounding the diode region. This localized modification allows the peripheral region to have different electrical properties than the central diode region, enabling reduced forward voltage through optimized current distribution without increasing overall component area.
Solution Approach 2:
The patent introduces a contact electrode layer in the peripheral region that is electrically connected to both the diode region and the second electrode layer. This adds a new dimensional pathway for current flow, allowing current to travel through the peripheral region rather than requiring a larger semiconductor layer area, thus reducing forward voltage without increasing component size.
2Area of stationary object
If the semiconductor layer area is decreased to achieve miniaturization, then the component size reduces, but the resistance value increases and forward voltage increases
Solution Approach 1:
By concentrating the current path optimization in the peripheral guard ring region with higher impurity concentration, the patent achieves low resistance without expanding the overall device area. The localized high-concentration region provides a low-resistance pathway that compensates for the reduced semiconductor layer area.
Solution Approach 2:
The contact electrode layer configured in the peripheral region creates an additional current pathway dimension. This allows current to flow through the peripheral region surrounding the diode region, effectively adding a parallel conduction path that reduces overall resistance without increasing the footprint of the device.
3Loss of energy
If a contact electrode layer is added to the peripheral region, then the resistance value in current path is reduced and forward voltage decreases, but the device complexity increases
Solution Approach 1:
The contact electrode layer in the peripheral region is electrically connected to both the diode region and the second electrode layer, merging multiple electrical connections into a single integrated structure. This consolidation achieves multiple functions (current collection, voltage reduction) without proportionally increasing device complexity.
Solution Approach 2:
The peripheral contact electrode layer serves multiple functions simultaneously: it acts as a current collection path, provides electrical connection between the diode region and second electrode layer, and functions as a guard ring for voltage control. This multi-functionality reduces the need for separate components, thereby limiting the increase in device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design allows for reduced forward voltage and miniaturization of Schottky barrier diodes without increasing the semiconductor layer area, improving current path resistance and maintaining effective electrical characteristics.
Implementation Method 1
a first electrode layer formed on the major surface of the semiconductor layer and forming a Schottky junction with the diode region
Implementation Method 2
a second electrode layer formed on the major surface of the semiconductor layer and forming an ohmic junction with the first conductivity type impurity region
Data Source
AI summary
A Schottky barrier diode includes a semiconductor layer having a major surface, a diode region of a first conductivity type formed in a surface layer portion of the semiconductor layer, a first conductivity type impurity region formed in the surface layer portion of the semiconductor layer and electrically connected to the diode region, a first electrode layer formed on the major surface of the semiconductor layer and forming a Schottky junction with the diode region, a second electrode layer formed on the major surface of the semiconductor layer and forming an ohmic junction with the first conductivity type impurity region, and a contact electrode layer formed on a peripheral region of the major surface of the semiconductor layer surrounding the first electrode layer so as to be electrically connected to the diode region via the semiconductor layer and being electrically connected to the second electrode layer.