Schottky Diode with Segmented Doping Regions
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Solution Overview
Problem
Schottky diodes experience reverse leakage current issues that negatively impact performance and efficiency, and reducing doping concentration to mitigate this also slows down startup speed.
Innovation Solution
A Schottky diode structure with a lightly doped region and a heavily doped region positioned on opposite sides of a gate structure, along with specific contact connections, to minimize reverse leakage current while maintaining fast startup speed.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-generated harmful factors
If the doping concentration of the lightly doped semiconductor material is reduced to lower reverse leakage current, then the reverse leakage current decreases, but the startup speed of the Schottky diode is lowered
Solution Approach 1:
The patent applies local quality by creating distinct doping regions with different concentrations within the semiconductor structure. Specifically, it forms a lightly doped region (first doping concentration) and a heavily doped region (second doping concentration, higher than the first) in different areas of the semiconductor layer. This allows the lightly doped region to reduce reverse leakage current while the heavily doped region maintains fast startup speed, resolving the contradiction by assigning different doping characteristics to different local areas rather than using a uniform doping concentration throughout.
2Object-generated harmful factors
If a lightly doped region is used to reduce reverse leakage current, then reverse leakage current is reduced, but the device complexity increases due to additional doping regions
Solution Approach 1:
The patent applies segmentation by dividing the semiconductor layer into multiple doped regions with different doping concentrations. The semiconductor layer is segmented into a lightly doped region and a heavily doped region, each serving specific functions. This segmentation allows the device to achieve low reverse leakage current through the lightly doped region while maintaining manufacturing feasibility through the structured division of doping zones, balancing performance improvement with manageable device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The structure effectively reduces reverse leakage current and maintains fast operating speed by utilizing a lower doping concentration for the lightly doped region and a gate structure to prevent elongated operating times.
Implementation Method 1
a gate structure on a part of the lightly doped region, wherein the gate structure includes a gate electrode and a gate dielectric layer
Implementation Method 2
A metal contacting a lightly doped semiconductor material may form a contact structure similar to a P-N junction (Schottky contact), which may serve as a Schottky diode
Data Source
AI summary
A Schottky diode is provided, which includes a well of a first conductive type and a lightly doped region of a second conductive type on the well, wherein the first conductive type is opposite to the second conductive type. The Schottky diode includes a heavily doped region of the second conductive type on the well, and a gate structure on a part of the lightly doped region. The gate structure includes a gate electrode and a gate dielectric layer. The lightly doped region not covered by the gate structure and the heavily doped region are disposed at two opposite sides of the gate structure, respectively. The Schottky diode includes a first contact electrically connecting the heavily doped region and a first electrode, a second contact electrically connecting the gate electrode and a second electrode, and a third contact electrically connecting the lightly doped region and the second electrode.