Schottky Barrier Diode Segmented N-Well Structure
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Solution Overview
Problem
Schottky barrier diodes face challenges in achieving low off current (Ioff) while maintaining fast turn-off and turn-on current (Ion) characteristics, particularly in applications requiring rapid switching and low reverse current flow.
Innovation Solution
The Schottky barrier diode design includes a semiconductor substrate with a first semiconductor region forming a Schottky contact and multiple second semiconductor regions, where the second contact surfaces have equal widths in both directions perpendicular to each other, allowing for effective depletion and blocking of backward current flow through the formation of a junction barrier.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If a conventional Schottky barrier diode structure is used, then fast turn-on current is achieved, but off current is too high for applications requiring low reverse current
Solution Approach 1:
The semiconductor substrate is divided into multiple isolated second semiconductor regions (N-wells) distributed within the first contact surface, rather than using a single continuous structure. This segmentation allows each region to be independently depleted by the first semiconductor region, creating multiple barriers to backward current flow while maintaining fast turn-on characteristics through the distributed Schottky contacts.
Solution Approach 2:
Different regions of the semiconductor substrate are given different electrical characteristics: the first semiconductor region (P-well) provides insulating characteristics for backward current blocking, while the second semiconductor regions (N-wells) provide conductive pathways for forward current. This local differentiation of electrical properties enables simultaneous optimization of both turn-on speed and off current levels.
2Reliability
If the semiconductor region structure is optimized for low off current, then backward current blocking improves, but manufacturing complexity increases
Solution Approach 1:
The second semiconductor regions are designed with asymmetric dimensional relationships: their widths in the first direction (L1) and second direction (L2) are made equal (L1=L2), creating a symmetric planar shape that simplifies manufacturing while the three-dimensional depletion structure from the P-well to multiple N-wells creates asymmetric current blocking paths that effectively reduce off current.
Solution Approach 2:
The invention optimizes specific geometric parameters of the second semiconductor regions, particularly setting equal widths in perpendicular directions (L1=L2), and controlling the depth and distribution of the regions within the semiconductor substrate. These parameter optimizations enable effective current blocking while maintaining compatibility with standard manufacturing processes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design enhances the blocking characteristic for backward current flow while maintaining the advantage of turn-on current, resulting in an improved off current characteristic, suitable for applications like mobile integrated circuits.
Implementation Method 1
The first semiconductor region is depleted into the second semiconductor regions by the backward current flow to block the backward current flow through the second semiconductor regions
Implementation Method 2
A Schottky barrier diode is a device using, as a rectification action, a potential barrier generated by a contact between a barrier metal and a semiconductor
Data Source
AI summary
Disclosed is a Schottky barrier diode which may be applied to an application that requires a low off current (Ioff), such as a mobile integrated circuit. The Schottky barrier diode can improve a blocking characteristic for a backward current flow while maintaining an advantage of a turn-on current, by improving the structure of a contact surface that is pinched off by depletion.