Schottky Electrode Carbon Control for Semiconductor Surface Uniformity
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Solution Overview
Problem
The existing manufacturing method for semiconductor devices with schottky diodes results in unevenness on the front surface electrode due to residual carbon from the resist, which can lead to deteriorated connectivity with connection members like bonding wires.
Innovation Solution
The semiconductor device incorporates a schottky electrode made of a metal material with a carbon content less than 6×10^19 cm^-3, utilizing a specific manufacturing process that includes a stripping liquid at 65 to 75°C to minimize residual carbon, thereby reducing the height difference of unevenness on the front surface electrode.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a conventional manufacturing method is used to form the schottky electrode, then the electrode can be formed with standard materials, but residual carbon from the resist remains on the electrode surface causing unevenness
Solution Approach 1:
The patent applies parameter changes by controlling the carbon content concentration parameter to be less than 6×10^19 cm^-3 in the schottky electrode. This quantitative control of the carbon parameter resolves the contradiction by setting a specific threshold that eliminates harmful residual carbon while maintaining the electrode's functional properties
Solution Approach 2:
The patent converts the harmful effect of residual carbon into a beneficial outcome by establishing a precise carbon content threshold. By controlling carbon to be less than 6×10^19 cm^-3, the previously harmful residual carbon becomes a controlled parameter that ensures surface uniformity and prevents connectivity deterioration
2Ease of manufacture
If the carbon content on the schottky electrode is high, then the manufacturing process is simpler, but the height difference of unevenness on the front surface electrode increases
Solution Approach 1:
The patent resolves this contradiction by establishing a specific parameter threshold for carbon content (less than 6×10^19 cm^-3). This parameter control enables the manufacturing process to achieve both ease of implementation and high precision by maintaining carbon within the defined range, thereby minimizing height difference unevenness
3Device complexity
If residual carbon remains on the schottky electrode, then no additional cleaning steps are needed, but connectivity with bonding wires deteriorates
Solution Approach 1:
The patent applies preliminary action by controlling the carbon content during the electrode formation process itself, rather than adding subsequent cleaning steps. By establishing carbon content less than 6×10^19 cm^-3 as part of the electrode manufacturing parameters, the process prevents connectivity deterioration without increasing device complexity or adding process steps
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively reduces the height difference of unevenness on the front surface electrode, ensuring improved connectivity with connection members by maintaining a low carbon content on the schottky electrode.
Implementation Method 1
utilizing a specific manufacturing process that includes a stripping liquid at 65 to 75°C to minimize residual carbon
Implementation Method 2
a heating process is performed at about 600° there, the crystallinity of the molybdenum is improved
Data Source
AI summary
A semiconductor device includes; a schottky diode; a semiconductor substrate that includes a first surface and a second surface opposite to the first surface; a schottky electrode that is placed on the first surface and schottky-contacts to the semiconductor substrate; a first electrode placed on the schottky electrode; and a second electrode that is placed on the second surface and is connected to the semiconductor substrate. The schottky electrode is made of a metal material that is a columnar crystal; and a content of carbon on the schottky electrode is less than 6×1019 cm−3 in at least a part of an area of the schottky electrode.