Ti-O/TiN Schottky Electrode Structure for Low-Voltage SiC Diodes
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Solution Overview
Problem
Existing semiconductor devices with Schottky barrier diodes face challenges in reducing forward voltage and reverse leakage current, particularly in SiC semiconductor devices, where the Schottky electrode's performance is limited by the materials used and their integration with the semiconductor layer.
Innovation Solution
The semiconductor device incorporates a Schottky electrode with a first portion made of oxygen-containing titanium (Ti) near the semiconductor surface, and a second portion made of titanium nitride (TiN), along with a lattice defect region to reduce voltage drops and enhance surge withstand capability, while maintaining efficient forward current passage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional Schottky electrode structure is used, then the device structure is simple, but the forward voltage is high and reverse leakage current is excessive
Solution Approach 1:
The Schottky electrode is divided into multiple portions with different compositions: a first portion containing Ti and O, a second portion containing Ti and N, and a third portion as a cap layer. This segmentation allows each layer to perform specific functions - the Ti-O portion reduces forward voltage, the Ti-N portion controls reverse leakage, and the cap layer provides stability, collectively resolving the performance contradiction.
Solution Approach 2:
The patent employs composite material structure in the Schottky electrode by combining Ti-O, Ti-N, and cap layer materials. This composite approach leverages the beneficial properties of each material - Ti-O for low forward voltage, Ti-N for reverse leakage control, and cap layer for structural stability - achieving superior overall performance that single materials cannot provide.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively reduces the forward voltage of the Schottky electrode and improves the surge withstand capability by optimizing the oxygen concentration profile and introducing a lattice defect region, thereby enhancing the overall performance of the semiconductor device.
Implementation Method 1
a Schottky electrode that forms a Schottky junction between the Schottky electrode and the semiconductor layer
Implementation Method 2
a lattice defect region to reduce voltage drops and enhance surge withstand capability
Data Source
AI summary
A semiconductor device includes a semiconductor layer, a Schottky electrode that is formed at a first surface of the semiconductor layer and that forms a Schottky junction Sj between the semiconductor layer and the Schottky electrode, and the Schottky electrode has a first portion that is selectively formed near the first surface of the semiconductor layer in a thickness direction of the Schottky electrode and that is made of Ti containing oxygen. The Schottky electrode may have a second portion that is formed on the first portion and that is made of Ti and N.