Schottky Hall Sensor Contacts for Higher Magnetic Sensitivity
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Solution Overview
Problem
Existing Hall effect devices are limited by material carrier mobility and require amplification for magnetic field sensitivity, and Schottky contacts have been avoided in these devices, leading to sensitivity and stability issues.
Innovation Solution
The use of Schottky contacts in Hall devices to the Hall material and creation of a depleted region.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If Schottky contacts are used in Hall devices, then sensitivity is improved due to accelerated electron velocity in the depleted region, but device complexity increases due to the need for metal-semiconductor junction fabrication
Solution Approach 1:
The patent changes the electrical contact type from ohmic to Schottky, fundamentally altering the contact parameters. This creates a depleted region with high electric field that accelerates charge carriers, directly improving sensitivity without requiring additional device components or complex structures.
Solution Approach 2:
The patent replaces the conventional ohmic contact mechanism with a Schottky barrier mechanism. Instead of relying on low-resistance metal-semiconductor interfaces, the invention uses the Schottky barrier's inherent electric field to accelerate electrons, substituting one physical mechanism for another more effective one.
2Device complexity
If conventional ohmic contacts are used in Hall devices, then device structure is simpler, but sensitivity is limited by material carrier mobility requiring amplification
Solution Approach 1:
The patent fundamentally changes the contact parameter from ohmic to Schottky type, creating a depleted region with high electric field. This parameter change accelerates charge carriers to higher velocities, directly boosting the Hall voltage signal without requiring external amplification circuits.
3Speed
If Schottky contacts are implemented with metal contacts on Hall material, then carrier velocity increases due to high electric field in depleted region, but manufacturing precision requirements increase
Solution Approach 1:
The patent changes the contact type to Schottky, which inherently creates a depleted region with high electric field. This parameter change accelerates carriers without requiring precise control of contact geometry, as the effect arises from the metal-semiconductor junction physics rather than contact dimensions.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The use of Schottky contacts in Hall devices to the Hall material and creation of a depleted region to form the Schottky Hall device, the diode is part of the Greek-cross body so that the electron gains an accelerated velocity.
Implementation Method 1
A Schottky barrier, named after Walter H. Schottky, is a potential energy barrier for electrons formed at a metal-semiconductor junction.
Implementation Method 2
The present invention relates to improvements in any device based on the Hall effect such as Hall sensors. More particularly, the invention relates to improvements by utilizing a Schottky contact in combination with a Hall device to create a Schottky-Hall device.
Implementation Method 3
The Hall effect is the production of a voltage difference known as the Hall voltage across an electrical conductor, transverse to an electric current in the conductor and to an applied magnetic field perpendicular to the current.
Data Source
AI summary
A Hall sensor with a main current path and a sensor path including at least one Schottky contact thereby increasing the capabilities above an ohmic contact Hall sensor.