Schottky Barrier Isolation Layout for Fast High-Voltage Switching
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Solution Overview
Problem
High-voltage semiconductor devices with Schottky barrier diodes face challenges in achieving fast switching operations while maintaining a compact chip size due to the need for wide isolation regions and separate Schottky barrier diodes, which increase chip area and result in longer reverse recovery times.
Innovation Solution
Incorporating a Schottky barrier diode within an isolation region of a high-voltage semiconductor device, where it is formed by a junction of a silicide layer and an N-type semiconductor region, allowing for electrical separation and reducing chip size by utilizing silicide layers and an isolation layer to connect anode and cathode contacts, thereby enabling faster switching with reduced reverse recovery time.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If a Schottky barrier diode is separately added for fast switching operation, then switching speed is improved, but chip area is increased
Solution Approach 1:
The patent combines the Schottky barrier diode structure with the isolation region structure, merging two previously separate functions into a single integrated region. The silicide layer forms both the Schottky barrier diode anode and the isolation region electrode, eliminating the need for separate structures and reducing chip area while maintaining fast switching capability
Solution Approach 2:
The isolation region is given dual functionality: it provides electrical isolation between devices and simultaneously forms the Schottky barrier diode for fast switching operations. This multi-functional design allows the same structure to serve multiple purposes, reducing the overall chip area required
2Reliability
If a wide isolation region is used for electrical isolation, then electrical isolation performance is improved, but chip area is increased
Solution Approach 1:
The patent merges the isolation region with the Schottky barrier diode structure, so that the same region provides both electrical isolation and diode functionality. The silicide layer within the isolation region creates the Schottky barrier while the isolation region itself provides electrical separation, eliminating the need for additional isolation space
Solution Approach 2:
The patent changes the material composition and electrical properties of the isolation region by introducing a silicide layer, transforming it from a passive isolation structure into an active Schottky barrier diode structure. This parameter change enables the isolation region to provide both isolation and fast switching functionality
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enables faster switching operations and reduces switching losses while minimizing the semiconductor chip size by integrating the Schottky barrier diode within the isolation region, addressing the issues of chip area expansion and reverse recovery time.
Implementation Method 1
A Schottky barrier diode is a type of diode that combines an N-type semiconductor and a metal, and has superior high-speed switching operation characteristics compared to a general PN junction diode. The Schottky barrier diode has a lower turn-on voltage than a PN junction diode.
Implementation Method 2
a BCD device or a high-voltage device may require a wide isolation region for electrical isolation from an adjacent device
Data Source
AI summary
A semiconductor device includes a device region, including a source contact, a drain contact formed on a substrate, and a gate contact formed between the source contact and the drain contact; an isolation region surrounding the device region, the isolation region including an N-type semiconductor region formed on the substrate, a first silicide layer and a second silicide layer formed in the N-type semiconductor region and separated from each other by an isolation layer, and an anode contact and a cathode contact connected to the first silicide layer and the second silicide layer, respectively; and a Schottky barrier diode formed inside the isolation region by a junction of the first silicide layer and the N-type semiconductor region. The anode contact is connected to the source contact, and the cathode contact is connected to the drain contact.