Schottky Junction Neuromorphic Synaptic Transistor for Linear Charge Control
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Solution Overview
Problem
Neuromorphic synaptic devices based on charge trap flash memory exhibit non-linear and asymmetric potentiation/depression curves due to Fowler-Nordheim tunneling, reducing learning efficiency and requiring additional circuits for improved linearity and symmetricity.
Innovation Solution
The implementation of a schottky junction in neuromorphic synaptic devices, utilizing a schottky tunneling region to enhance linearity and symmetricity of the potentiation/depression curve, achieved by forming a non-ohmic schottky junction with lightly doped source and drain regions, allowing schottky tunneling current to flow, which results in exponential conductance variation with gate voltage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If Fowler-Nordheim tunneling is used for charge injection in charge trap flash memory devices, then charge storage capability is achieved, but the potentiation/depression curve becomes non-linear and asymmetric, reducing learning efficiency
Solution Approach 1:
The patent changes the tunneling mechanism parameter from Fowler-Nordheim tunneling to Schottky tunneling by modifying the contact structure. This is achieved by forming a Schottky junction between the metal contact and the semiconductor surface, which fundamentally alters the charge injection mechanism and produces linear and symmetric conductance modulation characteristics suitable for neuromorphic computing applications
2Ease of operation
If additional circuits are added to adjust input signals for improving linearity and symmetricity, then learning efficiency improves, but device complexity and integration difficulty increase
Solution Approach 1:
The patent makes the synaptic device itself generate the desired linear and symmetric conductance modulation characteristics through the Schottky tunneling mechanism, eliminating the need for external additional circuits. The Schottky junction inherently provides the required characteristics, allowing the device to serve its own signal conditioning needs without external intervention
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach improves the learning efficiency of neuromorphic systems by achieving higher linearity and symmetricity without the need for additional circuits, thereby enhancing integration and performance.
Implementation Method 1
utilizing a schottky tunneling region to enhance linearity and symmetricity of the potentiation/depression curve, achieved by forming a non-ohmic schottky junction with lightly doped source and drain regions, allowing schottky tunneling current to flow
Implementation Method 2
The charge trap flash memory device injects or removes charges through an owler-Nordheim (FN) tunneling
Data Source
AI summary
A neuromorphic synaptic device based on a charge trap and having linearity and symmetricity improved by using a schottky junction and a neuromorphic system using the same are provided. The neuromorphic synaptic device includes a body layer formed on a semiconductor substrate, a source and a drain formed at a left side and a right side, or an upper side and a lower side of the body layer, a contact metal to form a schottky junction by making contact with the source and the drain, a gate insulating layer formed on the body layer, and including an oxide layer and a charge storage layer, and a gate formed on the gate insulating layer.