Schottky Contact Semiconductor Device for Fast Recovery
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Solution Overview
Problem
Current semiconductor devices with p-n-p structures face challenges such as long recovery times due to body diodes, long gate lengths, high gate capacitance, and parasitic bipolar structures, which hinder high-speed switching and avalanche breakdown voltage.
Innovation Solution
A semiconductor device with a Schottky diode structure, featuring a first semiconductor region of one conductivity type and a second semiconductor region of another type, where the third partial region forms a Schottky contact with the second conductive part, reducing gate length and eliminating parasitic bipolar structures, allowing for faster switching and higher avalanche breakdown voltage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a p-n-p structure is used in the semiconductor device, then the device can achieve basic semiconductor functionality, but the recovery time becomes long due to body diodes
Solution Approach 1:
The patent changes the fundamental structure from p-n-p to a configuration with Schottky contacts, altering the electrical parameters and carrier recombination characteristics to achieve faster recovery time without relying on the traditional p-n-p body diode mechanism
2Productivity
If a conventional gate structure is used, then the device can provide basic gate control, but the gate length becomes long and gate capacitance increases
Solution Approach 1:
The patent introduces a vertical Schottky contact structure that controls the channel from the side, effectively reducing the horizontal gate length while maintaining control effectiveness, thus decreasing gate capacitance and improving switching speed
3Reliability
If a conventional semiconductor structure is used, then the device can operate at standard voltages, but the avalanche breakdown voltage remains limited
Solution Approach 1:
The patent employs Schottky contacts formed with specific metal-semiconductor combinations that create high breakdown voltage characteristics, combining the advantages of metal contacts with semiconductor properties to achieve enhanced avalanche breakdown voltage
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The Schottky diode structure enables faster recovery, reduced gate and gate-drain capacitance, lower turn-on and turn-off losses, and higher avalanche breakdown voltage, resulting in improved semiconductor device characteristics.
Implementation Method 1
The third partial region and the second conductive part have a Schottky contact
Implementation Method 2
higher avalanche breakdown voltage
Data Source
AI summary
According to one embodiment, a semiconductor device includes first, second and third conductive parts, a first semiconductor region, and a first insulating part. A direction from the first conductive part toward the second conductive part is along a first direction. The first semiconductor region includes first, second, and third partial regions. A second direction from the first partial region toward the second partial region crosses the first direction. The third partial region is between the first partial region and the second conductive part in the first direction. The third partial region includes an opposing surface facing the second conductive part. A direction from the opposing surface toward the third conductive part is along the second direction. The first insulating part includes a first insulating region. At least a portion of the first insulating region is between the opposing surface and the third conductive part.