Schottky Barrier Sensor for Metal Particle Concentration Detection
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Solution Overview
Problem
Current methods for monitoring metal particle concentration in industrial settings, such as inductively coupled plasma and scanning electron microscopy, are cumbersome and costly, necessitating a more efficient and cost-effective detection system.
Innovation Solution
A semiconductor-based detector system utilizing a Schottky barrier structure with nickel silicide anode regions and silicon carbide epitaxial layers, which modulates its electrical behavior based on metal particle concentration, allowing for accurate detection through variations in cut-in voltage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If inductively coupled plasma or scanning electron microscopy is used for monitoring metal particle concentration, then measurement precision is improved, but device complexity and cost increase
Solution Approach 1:
The patent replaces complex mechanical/optical systems (ICP, SEM-EDX) with a simple electrical measurement system based on Schottky barrier diodes. The detector uses electrical contacts made of aluminum, nickel, or titanium deposited on semiconductor substrates (silicon, silicon carbide, gallium arsenide) to sense metal particles through changes in electrical current or voltage, eliminating the need for bulky plasma generators or electron microscopes.
Solution Approach 2:
The patent employs inexpensive semiconductor materials and metal deposits that can be easily fabricated using standard semiconductor processing techniques. The detector elements are simple diode structures that can be mass-produced at low cost, replacing expensive and maintenance-intensive equipment like ICP or SEM systems.
2Measurement precision
If inductively coupled plasma or scanning electron microscopy is used for monitoring metal particle concentration, then measurement precision is improved, but manufacturing cost increases
Solution Approach 1:
The patent replaces complex mechanical/optical systems (ICP, SEM-EDX) with a simple electrical measurement system based on Schottky barrier diodes. The detector uses electrical contacts made of aluminum, nickel, or titanium deposited on semiconductor substrates (silicon, silicon carbide, gallium arsenide) to sense metal particles through changes in electrical current or voltage, eliminating the need for bulky plasma generators or electron microscopes.
Solution Approach 2:
The patent employs inexpensive semiconductor materials and metal deposits that can be easily fabricated using standard semiconductor processing techniques. The detector elements are simple diode structures that can be mass-produced at low cost, replacing expensive and maintenance-intensive equipment like ICP or SEM systems.
3Device complexity
If a semiconductor detector with Schottky barrier structure is used, then device complexity is reduced, but measurement precision must be maintained
Solution Approach 1:
The patent utilizes changes in electrical parameters (current, voltage) of the Schottky barrier diode in response to metal particle presence. The detector measures variations in electrical conductivity or potential caused by metal particles interacting with the semiconductor surface, translating physical presence into quantifiable electrical signals for accurate concentration determination.
Solution Approach 2:
The patent replaces complex mechanical/optical systems (ICP, SEM-EDX) with a simple electrical measurement system based on Schottky barrier diodes. The detector uses electrical contacts made of aluminum, nickel, or titanium deposited on semiconductor substrates (silicon, silicon carbide, gallium arsenide) to sense metal particles through changes in electrical current or voltage, eliminating the need for bulky plasma generators or electron microscopes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables inexpensive and sensitive detection of metal particle concentration, capable of operating at high temperatures and in the presence of radiation, with a compact and simple manufacturing process.
Implementation Method 1
A semiconductor-based detector system utilizing a Schottky barrier structure with nickel silicide anode regions and silicon carbide epitaxial layers, which modulates its electrical behavior based on metal particle concentration, allowing for accurate detection through variations in cut-in voltage.
Data Source
AI summary
A system for detecting the concentration of metal particles of at least one first material, which includes a detector with: a semiconductor body including a cathode region, delimited by a front surface; and an anode structure made of metal material, which extends over a part of the cathode region, leaving part of the front surface exposed. The anode structure and the part of the cathode region form a first contact of a Schottky type. The exposed part of the front surface can access the metal particles.