Schottky Contact Sidewall Structure for Bipolar Current Control
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Solution Overview
Problem
Existing semiconductor devices face issues with bi-polar degradation, crystal damage, and inefficient current management due to the interface between metal and semiconductor regions, particularly in high-voltage applications.
Innovation Solution
Incorporating a metal structure with sidewalls adjacent to doped regions to form Schottky and ohmic contacts, enhancing the size and efficiency of these contacts without increasing the pitch, and integrating a Schottky diode to manage bipolar current.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If a metal contact is formed directly on the semiconductor surface, then the electrical connection is simple, but bi-polar degradation and crystal damage occur
Solution Approach 1:
The contact structure is segmented into multiple functional regions: an ohmic contact region for low-resistance connection and a Schottky contact region for current management. This segmentation allows each region to perform its specific function optimally, preventing bi-polar degradation while maintaining structural organization.
Solution Approach 2:
A metal structure with sidewalls acts as an intermediary element between the semiconductor body and external contacts. The sidewalls create distinct contact regions (ohmic and Schottky) that mediate the electrical connection, preventing direct harmful interaction while enabling controlled current flow and managing bipolar effects.
2Productivity
If the contact area is increased to improve current management, then the pitch increases, but the device density decreases
Solution Approach 1:
The contact structure utilizes vertical dimensionality through sidewalls extending from the semiconductor surface. This vertical development allows increased contact area and improved current management without increasing the horizontal pitch, effectively moving the solution from a two-dimensional to three-dimensional configuration.
Solution Approach 2:
The metal structure with sidewalls creates a nested configuration where multiple contact regions (ohmic and Schottky) are integrated within a compact footprint. The sidewalls enclose and organize different functional zones, enabling efficient current management while maintaining small pitch dimensions.
3Reliability
If a Schottky contact is formed to manage bipolar current, then the reverse recovery characteristics improve, but the manufacturing complexity increases
Solution Approach 1:
The Schottky contact formation is merged with the existing metal structure that already has sidewalls. By utilizing the previously formed sidewall structure, the patent combines multiple functions (current management and structural definition) into a single manufacturing process step, reducing overall manufacturing complexity while achieving improved reverse recovery characteristics.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution reduces bi-polar degradation, improves reverse recovery characteristics, and enhances operational performance by managing electron and hole currents effectively.
Implementation Method 1
The semiconductor device may comprise a Schottky contact comprising a junction of the third sidewall of the metal structure with the second doped region
Implementation Method 2
The metal structure may comprise a first sidewall adjacent a first portion of the first doped region
Data Source
AI summary
In an embodiment, a semiconductor device is provided. The semiconductor device may include a semiconductor body including a first doped region of a first conductivity type and a second doped region of a second conductivity type. The semiconductor device may include a metal structure, in the semiconductor body, overlying the second doped region. The metal structure may include a first sidewall adjacent a first portion of the first doped region, a second sidewall adjacent a second portion of the first doped region, and a third sidewall adjacent the second doped region. The semiconductor device may include a Schottky contact including a junction of the third sidewall of the metal structure with the second doped region.