Schottky Tritium Sensor Layers for Hydrogen-Selective Detection

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Solution Overview

Problem

Current detection methods for tritium are hindered by its low concentration in the atmosphere and the difficulty in differentiating it from hydrogen, especially in harsh environments like nuclear reactors, where traditional sensors fail to operate effectively due to high temperatures and radiation.

Innovation Solution

The development of tritium detection devices featuring a tritium absorption layer, anti-diffusion layer, Schottky contact region, and epitaxial semiconductor layer, which differentiate between tritium and hydrogen by utilizing materials like Yttrium and Nickel Oxide to block hydrogen atoms and detect beta particles emitted during tritium decay, allowing for precise tritium detection in nuclear environments.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If conventional detection methods are used, then device simplicity is maintained, but detection sensitivity and accuracy deteriorate due to low tritium concentration and harsh environmental conditions

Engineering Contradiction:
Improvedetection sensitivityVSAvoiddevice structure
Core Design Contradiction:
Measurement precisionVSDevice complexity

Solution Approach 1:

The device is segmented into functionally distinct layers: a semiconductor layer for detection, an anti-diffusion layer for protection, and a tritium absorption layer for selective capture. This segmentation allows each layer to optimize its specific function, achieving high detection sensitivity while maintaining a manageable overall structure through clear functional division.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The anti-diffusion layer acts as an intermediary between the semiconductor layer and the harsh external environment. It selectively blocks hydrogen diffusion while permitting beta particle transmission, thereby protecting the semiconductor from degradation without compromising detection sensitivity. This intermediary layer resolves the contradiction by mediating between environmental harshness and detection requirements.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Ease of manufacture

If the device structure is simplified, then manufacturing ease is improved, but the ability to differentiate tritium from hydrogen and withstand harsh environments deteriorates

Engineering Contradiction:
Improvedevice fabricationVSAvoidenvironmental withstand capability
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

Different layers are assigned specific local qualities: the anti-diffusion layer has selective permeability properties to block hydrogen while the semiconductor layer has beta particle detection capability. This local quality differentiation allows each region to perform its specific function optimally, achieving reliable tritium-hydrogen differentiation and environmental resistance through targeted material properties rather than uniform complex construction.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The device employs a composite structure combining semiconductor materials with specific anti-diffusion materials and tritium absorption materials. This composite approach leverages the complementary properties of different materials to achieve both ease of manufacture (using well-established semiconductor fabrication techniques) and high reliability (through selective barrier and detection properties).

Inventive Principle:
Principle #40Composite materials

3Measurement precision

If conventional hydrogen detection methods are used, then device complexity is reduced, but the ability to differentiate tritium from hydrogen deteriorates

Engineering Contradiction:
Improvetritium differentiation accuracyVSAvoidlayer structure
Core Design Contradiction:
Measurement precisionVSDevice complexity

Solution Approach 1:

The anti-diffusion layer extracts and blocks hydrogen atoms from reaching the semiconductor layer, while permitting beta particles to pass through. This selective extraction of hydrogen (the interfering substance) from the detection path enables clear tritium signal detection without hydrogen interference, achieving high differentiation accuracy through selective removal of the confounding element.

Inventive Principle:
Principle #2Taking out (Extraction)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

These devices enable sensitive and accurate detection of tritium concentrations, distinguishing it from hydrogen, and can operate in high-temperature, high-radiation environments, providing essential monitoring capabilities for nuclear reactor safety and waste management.

Implementation Method 1

a tritium absorption layer... comprising a metal selected from the group consisting of Y, Ni, Ti, Pt, Pd, Mg, Li, Na, Al, Zn, Mn, Ca, Fe, Ba, La, Sn, Cu, Co, Ru, Ir, Se, carbon nanotubes

Methodology Applied
Scientific EffectAdsorption: Adsorption

Implementation Method 2

an anti-diffusion layer... comprising an oxide, a nitride, or a combination thereof

Methodology Applied
Scientific EffectDiffusion barrier: Diffusion Barrier

Implementation Method 3

Tritium is an isotope of hydrogen that emits fast electrons (beta particles) with an average energy of 5.68 keV... the beta particles emitted from tritium can only travel a maximum distance of 7 mm in air

Methodology Applied
Scientific EffectBeta decay ionization: Ionisation

Data Source

PatentUS20230420597A1Tritium detection devices and methods of making and use thereof
Publication Date: 2023.12.28 OHIO STATE INNOVATION FOUND
  • US20230420597A1 patent drawing
  • US20230420597A1 patent drawing
  • US20230420597A1 patent drawing

AI summary

Disclosed herein are tritium detection devices and methods of making and use thereof. For example, disclosed herein are tritium detection devices comprising: a tritium detection region comprising a tritium absorption layer and an anti-diffusion layer; a Schottky contact region comprising a Schottky contact layer; a semiconductor layer, the semiconductor layer being a layer comprising a semiconductor; an epitaxial semiconductor layer, the epitaxial semiconductor layer being an epitaxial layer of the semiconductor; and an Ohmic contact layer.