SCR Junction Structure for Low-Voltage Fast Turn-On
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Solution Overview
Problem
Existing semiconductor controlled rectifier devices fail to simultaneously achieve low capacitance, low trigger voltage, fast turn-on, and low on-resistance, particularly in modern circuits with low supply voltage and fast data rates.
Innovation Solution
A semiconductor device is designed with a layered structure comprising doped regions of different charge carriers forming bipolar junction transistors, where a junction element with high and low dopant regions reduces trigger voltage and capacitance, eliminating the need for additional trigger diodes and complex isolation schemes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of operation
If complex trigger structures are used in semiconductor controlled rectifiers, then trigger voltage control is improved, but device complexity increases and capacitance increases
Solution Approach 1:
The patent extracts and eliminates the need for external trigger diodes and complex isolation schemes by integrating the trigger function directly into the semiconductor device structure. The doped regions and junction elements are configured to provide inherent triggering capability, removing external components and simplifying the overall device architecture while maintaining trigger voltage control.
Solution Approach 2:
The patent merges the trigger function with the main rectifier structure by configuring doped regions and junction elements that serve dual purposes. The second and third layers form junction elements that provide both triggering and rectifying functions, eliminating the need for separate trigger diodes and reducing device complexity.
2Ease of operation
If additional trigger diodes are added, then triggering capability is improved, but device complexity and isolation requirements increase
Solution Approach 1:
The triggering capability is merged into the main device structure through the configuration of the second and third layers that form junction elements. These junction elements provide inherent triggering functionality without requiring external trigger diodes, thereby eliminating the need for complex isolation schemes between trigger and rectifier sections.
Solution Approach 2:
The doped regions and junction elements are designed to perform multiple functions: the second and third layers form junction elements that provide both triggering and rectifying functions, while the high and low dopant regions work together to control both trigger voltage and capacitance. This multi-functionality eliminates the need for separate dedicated trigger components.
3Quantity of substance
If low dopant regions are used at emitter-base junctions, then capacitance is reduced, but manufacturing complexity increases
Solution Approach 1:
The patent applies local quality by creating high dopant regions and low dopant regions at specific locations within the semiconductor structure. The low dopant regions are positioned at the emitter-base junctions to reduce capacitance, while high dopant regions are placed adjacent to them to provide triggering capability. This localized doping strategy achieves low capacitance without requiring complex overall doping structures.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution achieves low capacitance and fast turn-on with reduced trigger voltage, simplifying the device configuration and enhancing performance in low supply voltage and high data rate applications.
Implementation Method 1
Injection of minority carriers starts from both sides and the turn-on effect is fast
Implementation Method 2
At least one of the emitter base junctions has a low capacitance, therefore, the semiconductor controlled rectifier has a low capacitance, too
Data Source
AI summary
A semiconductor device is provided, more particularly, a semiconductor controlled rectifier device (SCR) device, which achieves low capacitance, low trigger voltage, fast turn-on, and low on-resistance. Additionally, the semiconductor controlled rectifier device (SCR) device can achieve low capacitance, low trigger voltage, fast turn-on, and low on-resistance at the same time.