Screen Printed Via Structure for Semiconductor Interconnects
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Solution Overview
Problem
Traditional methods for creating through-silicon vias (TSVs) in semiconductor manufacturing require expensive vacuum equipment for electrode electroplating, increasing device costs.
Innovation Solution
A method involving screen printing to fill conductive materials into via holes in semiconductor substrates, using a first pad as a seed layer for electroplating, which eliminates the need for vacuum techniques and allows for the formation of via structures without exceeding the substrate's surface.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If vacuum techniques (plasma vapor deposition) are used to form seeding layers for electroplating in TSV fabrication, then the conductive filling material can be properly deposited, but expensive vacuum equipment is required which increases device costs
Solution Approach 1:
The patent extracts the seeding layer formation step from the vacuum environment and performs it directly on the substrate surface using screen printing technology. This eliminates the need for expensive vacuum equipment while maintaining the necessary conductive seed layer for subsequent electroplating of the via structure.
Solution Approach 2:
The patent employs screen printing, a low-cost, simple technique, to deposit the seeding layer and conductive material. This replaces expensive vacuum deposition equipment with an affordable, easily implementable method that achieves the same functional result without requiring complex vacuum systems.
2Reliability
If traditional electroplating methods are used to fill via holes, then conductive material can be deposited, but vacuum equipment is required which complicates the manufacturing process
Solution Approach 1:
The patent replaces the complex vacuum-based mechanical system with a simpler screen printing process. The screen printing method uses a mesh screen and stencil to deposit conductive material directly through the via hole opening, eliminating the need for vacuum chambers and complex deposition equipment.
Solution Approach 2:
The patent introduces a screen printing stencil as an intermediary tool that allows conductive material to be deposited directly into the via hole and on the substrate surface. This simple intermediary device replaces complex vacuum deposition equipment while achieving the same purpose of forming a conductive path.
3Adaptability or versatility
If via structures are formed to connect external contacts on both sides of the substrate, then electrical connection between circuits is enabled, but the fabrication process becomes more complex
Solution Approach 1:
The patent combines the seeding layer formation and conductive material deposition steps into a single screen printing operation. This merging of steps simplifies the overall fabrication process while still achieving the necessary via structure formation for electrical connections between circuits on both sides of the substrate.
Solution Approach 2:
The patent performs screen printing to create both the seeding layer and fill the via structure in advance, before final assembly. This preliminary action prepares the conductive paths in advance, simplifying subsequent manufacturing steps and reducing overall process complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces production costs by eliminating the requirement for expensive vacuum equipment while enabling the formation of effective via structures for interconnects between semiconductor components.
Implementation Method 1
performing a screen printing process on the first side of the substrate to fill a conductive material into the via hole so as to form a via structure in the via hole and a first pad disposed on a first side of the substrate, adjoined to the via structure
Implementation Method 2
an electrode electroplating method is used for the conducive filling materials to be disposed in the hole of the through silicon via (TSV)
Data Source
AI summary
A method of forming an interconnection structure is disclosed, including providing a substrate having a first side and a second side opposite to the first side, forming a via hole through the substrate, wherein the via hole has a first opening in the first side and a second opening in the second side, forming a first pad covering the first opening, and forming a via structure in the via hole subsequent to forming the first pad, wherein the via structure includes a conductive material and is adjoined to the first pad.