Scribe Region Air Gap Structure for Semiconductor Crack Guiding

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Solution Overview

Problem

Low-k insulating materials in semiconductor devices, such as silicon oxycarbide and silicon carbonitride, exhibit weak thermo-mechanical characteristics and poor adhesion, leading to cracks during the dicing process, which reduces the yield of semiconductor chips.

Innovation Solution

Incorporating a scribe region with a crack guide structure and air gaps in the semiconductor wafer design, where the air gaps are structurally weaker than surrounding areas, to guide cracks generated during dicing towards these regions, thereby reducing the likelihood of crack propagation to adjacent chips and improving dicing efficiency.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Speed

If low-k insulating material is used to reduce parasitic capacitance, then high-speed operation is achieved, but adhesion to conductive layers deteriorates

Engineering Contradiction:

Improveoperation speedVSAvoidadhesion strength

Core Design Contradiction:

SpeedVSStrength

Solution Approach 1:

The patent introduces air gaps that segment the low-k insulating film into separate regions. This segmentation prevents crack propagation across the entire film while maintaining the low-k material's electrical benefits in the active regions.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The patent applies different structural qualities to different regions: the scribe region contains air gaps with reduced low-k material for mechanical flexibility and crack absorption, while the active device regions maintain continuous low-k film for electrical performance.

Inventive Principle:

Principle #3Local quality

2Speed

If low-k insulating material is used to reduce parasitic capacitance, then high-speed operation is achieved, but crack resistance during dicing deteriorates

Engineering Contradiction:

Improveoperation speedVSAvoidcrack resistance

Core Design Contradiction:

SpeedVSReliability

Solution Approach 1:

The patent converts the harmful brittleness of low-k material into a beneficial feature by intentionally creating air gaps that serve as crack absorption zones. The air gaps act as stress relief points that prevent cracks from propagating into active device regions during dicing.

Inventive Principle:

Principle #22Blessing in disguise (Convert harm into benefit)

Solution Approach 2:

The air gaps serve as intermediary regions between the rigid low-k insulating film and the external dicing forces. These gaps absorb mechanical stress and prevent direct transmission of cracking forces to the active device regions.

Inventive Principle:

Principle #24Intermediary (Mediator)

3Reliability

If air gaps are introduced in scribe region, then crack propagation is controlled, but device complexity increases

Engineering Contradiction:

Improvecrack controlVSAvoidstructure complexity

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The air gaps segment the scribe region structure, creating distinct zones for crack management. This segmentation is localized only to the scribe region, leaving the active device regions structurally simple and unchanged.

Inventive Principle:

Principle #1Segmentation

Data Source

PatentUS20240243077A1Apparatus including air gap in scribe region of semiconductor device

Publication Date: 2024.07.18 MICRON TECHNOLOGY INC

AI summary

According to one or more embodiments, an apparatus includes an insulating structure in the scribe region, a plurality of metal layers, the metal layers including a top metal layer in the insulating structure in the scribe region, a groove on a top of the insulating structure in the scribe region, and an air gap between the top metal layer and the groove in the scribe region.