Scribe Lane Stepped Sidewall Layout for Test and Align Patterns
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Solution Overview
Problem
Current semiconductor manufacturing processes face challenges in efficiently disposing test patterns and align key patterns in the scribe lane, which affects the assessment of electric properties and the photolithography process.
Innovation Solution
A semiconductor device design featuring a substrate with a stepped sidewall structure and insulation layers, where the test pattern group and align key pattern are strategically positioned on the scribe lane, separated by a division region, allowing for efficient electrical testing and photolithography alignment.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If test patterns and align key patterns are disposed in the scribe lane, then electrical testing and photolithography alignment can be performed, but the scribe lane space becomes congested and difficult to manage
Solution Approach 1:
The scribe lane is divided into multiple regions: a first scribe lane region containing test patterns for electrical testing, a second scribe lane region containing align key patterns for photolithography alignment, and a division region separating them. This segmentation allows each type of pattern to be independently managed and processed, reducing overall complexity while maintaining both testing and alignment capabilities.
2Area of stationary object
If test patterns and align key patterns are closely positioned to maximize space utilization, then scribe lane area is optimized, but measurement precision and alignment accuracy may deteriorate
Solution Approach 1:
The division region is designed with specific local characteristics including different surface roughness compared to adjacent regions, and is filled with insulation material having different properties. This creates distinct local zones that maintain measurement precision for both test patterns and align key patterns while optimizing overall space utilization in the scribe lane.
3Ease of manufacture
If a simple flat structure is used in the scribe lane, then manufacturing is easier, but functional differentiation between test and align key regions is insufficient
Solution Approach 1:
The division region introduces vertical dimensionality through stepped sidewalls and varying depth levels. The division region extends to different depths than adjacent regions, creating three-dimensional structural differentiation that enables functional separation while maintaining manufacturing feasibility through standard semiconductor fabrication processes.
Data Source
AI summary
A semiconductor device includes a substrate including a first part and a second part, a memory cell disposed on the first part, an insulation layer disposed on the first part and the second part, the insulation layer covering the memory cell, a portion of the insulation layer on the second part including a stepped sidewall, and a first pattern group disposed on the second part and in the portion of the insulation layer and the substrate. A first sidewall of the semiconductor device corresponds to the stepped sidewall including an upper sidewall, a lower sidewall and a connecting surface connecting the upper sidewall to the lower sidewall. The lower sidewall disposed under the upper sidewall is closer to the substrate than the upper sidewall, and has surface roughness different from surface roughness of the upper sidewall.