3D Semiconductor Package Scribe Line Bonding Warpage Reduction
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Solution Overview
Problem
The semiconductor industry faces challenges in scaling semiconductor packages beyond two-dimensional (2D) limits, necessitating the adoption of three-dimensional (3D) packaging schemes, which require innovative methods for efficient integration and bonding of device wafers and dies to enhance density and reduce warpage.
Innovation Solution
A method involving hybrid bonding of top device dies with multiple die regions onto a bottom device wafer using a scribe line region to connect die regions, reducing the need for multiple pick and place processes and minimizing insulating material volume between die regions, thereby shortening cycle time and reducing warpage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If multiple separate device dies are bonded onto a bottom device wafer using conventional pick and place processes, then each die can be independently integrated, but the processing time increases and warpage occurs due to multiple bonding steps and large volume of insulating material required
Solution Approach 1:
The patent combines multiple die regions into a single device die structure that is bonded in one step to the bottom device wafer. This merging approach eliminates the need for multiple separate pick and place bonding processes, reducing both processing time and the cumulative warpage effects that would result from multiple bonding operations.
Solution Approach 2:
The patent utilizes the scribe line region, which is typically a waste area in conventional semiconductor manufacturing, and transforms it into a functional connecting structure. By using the scribe line region to connect die regions, the invention effectively adds a dimensional aspect to the bonding structure that reduces insulating material volume and minimizes warpage without requiring additional processing steps.
2Ease of manufacture
If conventional bonding processes are used for integrating device dies, then standard manufacturing procedures can be followed, but the cycle time is extended and warpage is induced due to multiple processing steps
Solution Approach 1:
The patent performs preliminary actions by forming the scribe line region connecting structure between die regions before the bonding process. This pre-prepared connecting structure allows for a single-step bonding operation rather than requiring multiple subsequent bonding steps, thereby reducing cycle time while maintaining ease of manufacture through integration into the existing manufacturing flow.
3Reliability
If large volume of insulating material is used between die regions for electrical isolation, then proper electrical isolation is achieved, but warpage increases and processing complexity increases
Solution Approach 1:
The patent extracts and utilizes the scribe line region, which is normally considered waste material or space between functional die regions, and transforms it into an active connecting structure. This extraction approach eliminates the need for large volumes of insulating material between die regions, as the scribe line region itself provides the necessary structural and electrical isolation functions, thereby reducing warpage.
4Manufacturing precision
If multiple pick and place processes are used for bonding device dies, then each die can be precisely positioned, but the processing time increases significantly
Solution Approach 1:
The patent merges multiple die regions into a single bonded structure that is positioned and bonded in one operation rather than requiring multiple separate pick and place processes. This merging maintains manufacturing precision because the entire multi-region die structure is positioned as a single unit, while simultaneously improving productivity by eliminating repeated positioning and bonding cycles.
Data Source
AI summary
A semiconductor package and a manufacturing method thereof are provided. The semiconductor package includes a first device die and a second device die. The first device die includes first bonding pads at a front surface of the first device die. The second device die is bonded on the first device die, and includes die regions and a scribe line region connecting the die regions with one another. The die regions respectively comprise second bonding pads at a front surface of the second device die. The second bonding pads are respectively in contact with one of the first bonding pads.