Seal Cap Gas Channel for Semiconductor Substrate Processing

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Existing substrate processing apparatuses face complications in preventing the adhesion of by-products due to the complex structure required for gas supply ports, which can lead to stagnation and particle generation in reaction chambers.

Innovation Solution

A substrate processing apparatus is designed with a seal cap and sealing members that form a first gas channel, allowing for a non-moving gas supply port configuration, preventing by-product adhesion through a simple structure by ensuring active gas flow and separation of supply port openings.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Object-affected harmful factors

If a gas supply port is disposed on a moving part to prevent by-product adhesion, then by-product adhesion is suppressed, but the structure becomes complicated

Engineering Contradiction:
Improveby-product adhesionVSAvoidstructure
Core Design Contradiction:
Object-affected harmful factorsVSDevice complexity

Solution Approach 1:

Instead of placing the gas supply port on the moving seal cap, the invention inverts the approach by providing the gas supply port on the stationary reaction container. The gas is supplied through a gas channel formed in the sealing structure itself, eliminating the need for moving parts in the gas supply system while still achieving effective gas flow to prevent by-product adhesion.

Inventive Principle:
Principle #13The other way round (Inversion)

Solution Approach 2:

The invention introduces a gas channel as an intermediary structure formed between the seal cap and reaction container. This gas channel serves as a mediator that delivers gas from the stationary supply port to the reaction chamber, enabling gas flow without requiring the supply port itself to be on a moving part.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Device complexity

If gas supply ports are positioned close together to simplify structure, then structure is simplified, but gas flow stagnation occurs leading to particle generation

Engineering Contradiction:
ImprovestructureVSAvoidparticle generation
Core Design Contradiction:
Device complexityVSObject-generated harmful factors

Solution Approach 1:

The invention applies local quality by creating a gas channel with specific local characteristics - the channel is formed in the sealing structure with a configuration that ensures proper gas flow distribution. The separated positioning of gas supply and exhaust ports within the sealing structure creates localized flow paths that prevent stagnation while maintaining structural integration.

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration effectively prevents by-product adhesion and ensures uniform gas flow, maintaining the integrity of the processing chamber and reducing the risk of particle formation, while simplifying the apparatus structure.

Implementation Method 1

a first gas channel, formed in a region between the first sealing member and the second sealing member in a state where the seal cap is in contact with the reaction container

Methodology Applied
Scientific EffectGas flow: Convection

Implementation Method 2

a second gas channel, provided to the seal cap and through which the first gas channel is in communication with an inside of the reaction container

Methodology Applied
Scientific EffectGas flow: Convection

Implementation Method 3

a seal cap, brought into contact with one end in an opening side of the reaction container via a first sealing member and a second sealing member so as to seal the opening of the reaction container air-tightly

Methodology Applied
Scientific EffectSealing:

Data Source

PatentUS8367530B2Substrate processing apparatus and manufacturing method of semiconductor device
Publication Date: 2013.02.05 KOKUSAI DENKI KK
  • US8367530B2 patent drawing
  • US8367530B2 patent drawing
  • US8367530B2 patent drawing

AI summary

A substrate processing apparatus, including: a reaction container in which a substrate is processed; a seal cap, brought into contact with one end in an opening side of the reaction container via a first sealing member and a second sealing member so as to seal the opening of the reaction container air-tightly; a first gas channel, formed in a region between the first sealing member and the second sealing member in a state where the seal cap is in contact with the reaction container; a second gas channel, provided to the seal cap and through which the first gas channel is in communication with an inside of the reaction container; a first gas supply port that is provided to the reaction container and supplies a first gas to the first gas channel; and a second gas supply port that is provided to the reaction container and supplies a second gas into the reaction container, wherein a front end opening of the first gas supply port opening to the first gas channel, and a base opening of the second gas channel opening to the first gas channel being separated from each other in a state where the seal cap is in contact with the reaction container.