Seal Ring Buffer Isolation Structure for Higher Chip Density
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The semiconductor industry faces challenges in improving integration density and reducing minimum feature size while maintaining processing efficiency and device reliability, particularly in the formation of buffer regions and isolation structures around seal rings and scribe regions.
Innovation Solution
The formation of isolation structures and epitaxial structures in the buffer region between the seal ring and the scribe region improves planarity and allows for a smaller buffer region, enhancing device density. Additionally, forming epitaxial source/drain regions in the buffer region reduces stress and improves processing efficiency, including improved plasma dicing capabilities.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a larger buffer region is formed between the seal ring and scribe region to ensure proper isolation and processing, then device reliability and processing efficiency are improved, but device density decreases
Solution Approach 1:
The patent applies local quality by forming isolation structures selectively in specific regions of the buffer zone. Rather than uniformly treating the entire buffer region, isolation structures are placed locally at critical interfaces between the seal ring and scribe region, providing targeted reliability enhancement while minimizing the overall buffer area required.
Solution Approach 2:
The buffer region is segmented into functional zones with isolation structures positioned at specific locations. This segmentation allows the buffer region to be optimized - sufficient isolation is provided where needed while reducing buffer area in less critical areas, thereby improving device density without compromising reliability.
2Area of stationary object
If the buffer region size is reduced to increase device density, then device density improves, but processing efficiency and planarity deteriorate
Solution Approach 1:
Isolation structures are formed preliminarily during the manufacturing process before final device assembly. This preliminary action ensures that planarity and processing requirements are met early in the process, allowing the buffer region to be minimized in size while still maintaining the necessary processing efficiency and surface quality.
3Area of stationary object
If the buffer region size is reduced to increase device density, then device density improves, but topographical issues and stress increase
Solution Approach 1:
Isolation structures serve as intermediary elements between the seal ring and scribe region. These structures mediate the mechanical and topographical relationships in the reduced buffer region, absorbing stress and maintaining surface planarity despite the minimized buffer zone size, thereby preserving manufacturing precision.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach increases device density by allowing a smaller buffer region, improves processing efficiency by reducing topographical issues, and enhances device reliability by minimizing stress from the seal ring and singulation processes.
Implementation Method 1
forming isolation structures and epitaxial structures in the buffer region
Data Source
AI summary
A method includes forming first nanostructures over a first region of a substrate; forming second nanostructures over a second region of the substrate; forming first gate structures around the first nanostructures; replacing the second nanostructures with isolation regions; and forming a seal ring over the substrate, wherein the seal ring is between the first region and the second region.