Seal Ring Buffer Layout for Plasma-Diced NSFET Density
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Solution Overview
Problem
The integration density of semiconductor devices is limited by the need to protect sensitive components from damage during processing, particularly during singulation, which can be exacerbated by the presence of metal features in buffer regions.
Innovation Solution
The formation of isolation structures in the buffer region, including epitaxial structures, allows for a smaller buffer region, improving planarity and enabling plasma dicing without metal features, thus enhancing device density and reducing damage to sensitive components.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a larger buffer region is used to protect sensitive components during singulation, then reliability is improved, but integration density deteriorates
Solution Approach 1:
The buffer region is segmented into two distinct parts: a first buffer region containing metal features for enhanced protection of sensitive components, and a second buffer region without metal features optimized for plasma dicing. This segmentation allows each region to be optimized for its specific function, resolving the contradiction between protection and integration density
Solution Approach 2:
Different buffer regions are assigned different material compositions and structures tailored to their specific functions. The first buffer region uses metal features for mechanical protection, while the second buffer region uses a metal-free composition for plasma dicing compatibility. This local differentiation allows the overall buffer structure to achieve both high reliability and high integration density
2Reliability
If metal features are present in buffer regions to protect sensitive components, then reliability is improved, but plasma dicing capability deteriorates
Solution Approach 1:
The buffer region is divided into a first buffer region with metal features for protection and a second buffer region without metal features for plasma dicing. This segmentation allows metal features to provide protection where needed while leaving the plasma dicing path clear in the second region
Solution Approach 2:
The second buffer region acts as an intermediary zone between the metal-containing first buffer region and the scribe region. It provides a transition area that is compatible with plasma dicing while still maintaining the protective function of the first buffer region, thus mediating between the conflicting requirements
3Productivity
If the buffer region size is reduced to improve integration density, then productivity is improved, but protection of sensitive components deteriorates
Solution Approach 1:
The buffer region uses local quality differentiation where the first buffer region contains metal features specifically positioned to protect sensitive components from mechanical damage, while the second buffer region is optimized for plasma dicing. This allows effective protection with minimal buffer region size, improving integration density
Solution Approach 2:
The protection function is enhanced by adding vertical dimension through multi-layer metal features and conductive structures within the buffer region. This allows protection without increasing the lateral footprint of the buffer region, thereby maintaining high integration density while improving reliability
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach improves the integration density of semiconductor devices by reducing the risk of damage during processing, allowing for more efficient plasma dicing and enhancing the reliability and yield of nanostructure field effect transistors (NSFETs) through the use of isolation regions and epitaxial source/drain regions in the buffer region.
Implementation Method 1
The formation of isolation structures in the buffer region, including epitaxial structures
Data Source
AI summary
A method includes forming first nanostructures over a first region of a substrate; forming second nanostructures over a second region of the substrate; forming first gate structures around the first nanostructures; replacing the second nanostructures with isolation regions; and forming a seal ring over the substrate, wherein the seal ring is between the first region and the second region.