Seal Ring Structure with Dual Interconnects for Crack Detection
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current semiconductor technologies face challenges in detecting cracks in semiconductor dies due to the further scaling-down of devices and increasing demands for smaller dimensions and more functions, which can lead to mechanical damage and reliability issues during assembly and operation.
Innovation Solution
A seal ring structure comprising a first interconnect element and a plurality of second interconnect elements formed on a semiconductor substrate, with the second interconnect elements electrically separated from the first interconnect element, is used to surround the integrated circuit region. This structure includes a method for detecting cracks by measuring the resistance between the second interconnect elements using sensing circuits, determining the presence of cracks based on the measured resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a double die seal ring structure is used to prevent cracking, then the protection against mechanical damage is improved, but the ability to detect cracks is still insufficient
Solution Approach 1:
The seal ring structure performs self-detection of cracks through its own interconnect elements. The second interconnect elements act as both structural components of the seal ring and as sensing elements that automatically detect cracks without requiring external detection systems, enabling the structure to monitor its own integrity.
Solution Approach 2:
The interconnect elements of the seal ring serve multiple functions: they provide mechanical protection against cracking while simultaneously acting as sensing elements for crack detection. The same structural components that protect the die also function as the detection mechanism, eliminating the need for separate detection systems.
2Length of moving object
If the semiconductor device is scaled down to achieve smaller dimensions, then the device size is reduced, but the susceptibility to mechanical damage increases
Solution Approach 1:
The seal ring with integrated crack detection capability is formed beforehand to protect the integrated circuit region before mechanical damage can occur. The structure proactively prevents cracking during dicing and assembly processes, and the second interconnect elements are pre-positioned to detect any cracks that may develop during subsequent handling and operation.
3Reliability
If a seal ring structure is used to protect the integrated circuit region, then the protection against external stress is improved, but the complexity of the structure increases
Solution Approach 1:
The protective seal ring structure and the crack detection functionality are merged into a single integrated structure. The second interconnect elements are incorporated within the seal ring itself, combining the mechanical protection function with the sensing function in one unified structure rather than requiring separate protective and detection systems.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The seal ring structure effectively protects the integrated circuit region from external stress and moisture, while the crack detection method enhances the reliability and performance of semiconductor dies by accurately identifying and addressing potential mechanical damage.
Implementation Method 1
the seal ring can block unintended stress cracks from the scribe lines to the integrated circuits produced during the wafer dicing process
Implementation Method 2
the die seal ring can block moisture penetration or chemical damage like acid, alkaline containing or diffusion of contaminating species
Implementation Method 3
The resistance of the portion of the semiconductor substrate that is located between two of the second interconnect elements is measured through the seal ring by at least one sensing circuit
Implementation Method 4
The second interconnect elements are formed below the first interconnect element and on a second group of P-type doping regions over the semiconductor substrate
Data Source
AI summary
A seal ring structure is provided. The seal ring structure includes a seal ring on a semiconductor substrate. The seal ring includes a first interconnect element and a plurality of second interconnect elements. The first interconnect element is formed on a shallow trench isolation (STI) region and a first group of P-type doping regions over the semiconductor substrate. The second interconnect elements are formed below the first interconnect element and on a second group of P-type doping regions over the semiconductor substrate. The second interconnect elements are electrically separated from the first interconnect element, and the first and second groups of P-type doping regions are separated by the STI region.