Seal Ring Gate Layout to Protect FinFET Corner Active Regions
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Solution Overview
Problem
Existing seal structures for semiconductor devices, particularly multi-gate devices like FinFETs and MBC transistors, are inadequate in preventing damage from mist ingress and stress during singulation, leading to potential anomalies and loss of active regions.
Innovation Solution
The proposed IC chip design includes a device region surrounded by a ring region with specific active regions and gate structures that do not cover large areas, minimizing the loss of active regions during the formation of seal structures. The design features first and second active regions with corresponding gate structures in the ring region and corner areas, respectively, to ensure uniform protection.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If seal structures are implemented to protect semiconductor devices from mist ingress and stress during singulation, then reliability is improved, but manufacturing precision deteriorates due to loss of active regions and anomalies in seal ring structures
Solution Approach 1:
The seal structure is divided into multiple discrete gate structures spaced apart from each other, rather than forming a continuous seal ring. This segmentation prevents the formation of large continuous seal regions that cause active region loss, while still providing protection through distributed gate structures that prevent mist ingress and stress concentration
Solution Approach 2:
Gate structures are strategically positioned at specific locations within the seal region rather than uniformly distributed. The gate structures are placed to provide local protection where needed most, with spacing that prevents excessive active region consumption while maintaining effective sealing functionality at critical areas
2Reliability
If gate structures are formed to create seal structures, then protection is improved, but active region loss increases due to large area coverage
Solution Approach 1:
The continuous seal ring is segmented into discrete, spaced-apart gate structures. This reduces the total area covered by gate structures while maintaining sealing effectiveness through strategic positioning, thereby minimizing active region loss while still providing environmental protection
Solution Approach 2:
Instead of forming complete continuous seal rings that cover excessive area, the invention uses partial seal structures with gate structures spaced apart. This partial action provides sufficient protection against environmental stresses while avoiding the excessive active region consumption that would result from complete continuous sealing
Data Source
AI summary
Integrated circuit (IC) chips are provided. An IC chip according to the present corner area between an outer corner of the device region and an inner corner of the ring region. The ring region includes a first active region extending along a first direction, a first source/drain contact disposed partially over the first active region and extending along the first direction, and first gate structures disposed completely over the first active region and each extending lengthwise along the first direction. The corner area includes a second active region extending along a second direction that forms an acute angle with the first direction, a second source/drain contact disposed partially over the second active region and extending along the second direction, and second gate structures disposed over the second active region and each extending along the first direction.