Semiconductor Seal Ring Segmentation for Noise Suppression

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Semiconductor devices with traditional seal rings suffer from noise propagation due to low impedance, which is exacerbated in high-frequency operations, leading to increased noise pickup and potential damage.

Innovation Solution

A semiconductor device with a seal ring structure that includes an SOI substrate, a BOX layer, and multiple layers of wirings, where the electrode portion is electrically connected to the semiconductor layer through a silicide layer, forming capacitance between the n-type semiconductor layer, BOX layer, and p-type well, thereby increasing impedance and suppressing noise propagation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a traditional seal ring with low impedance is used, then the seal ring provides effective protection against chipping and moisture, but noise propagates easily through the seal ring to the entire semiconductor chip

Engineering Contradiction:
Improveprotection against chipping and moistureVSAvoidnoise propagation
Core Design Contradiction:
ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The seal ring is divided into multiple segments (first seal ring segment, second seal ring segment, third seal ring segment) arranged in a triangular configuration. This segmentation breaks the continuous low-impedance path into discrete sections, allowing noise suppression while maintaining the protective function. Each segment is electrically connected to form a distributed structure that increases impedance for noise signals.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Capacitors are introduced as intermediary elements between the seal ring segments and ground. These capacitors act as mediators that block high-frequency noise signals while allowing the seal ring to maintain its protective function. The capacitors increase the impedance path for noise propagation without compromising the mechanical and environmental protection provided by the seal ring structure.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Reliability

If the seal ring has very low impedance to provide good protection, then moisture resistance and chipping prevention are improved, but noise applied to the seal ring propagates to the entire semiconductor chip

Engineering Contradiction:
Improvemoisture resistanceVSAvoidnoise pickup
Core Design Contradiction:
ReliabilityVSObject-generated harmful factors

Solution Approach 1:

The seal ring is segmented into multiple sections with capacitors connected to ground at each segment. This segmentation creates multiple high-impedance nodes that prevent noise pickup and propagation while maintaining the continuous protective barrier function against moisture and physical damage.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The low-impedance characteristic that causes noise propagation is converted into a benefit by adding capacitors to ground. The capacitors transform the low-impedance noise path into a high-impedance blocking path for high-frequency signals, while the seal ring maintains its low-impedance protective function for DC and low-frequency signals related to moisture and chipping protection.

Inventive Principle:
Principle #22Blessing in disguise (Convert harm into benefit)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The proposed solution effectively suppresses noise propagation across the semiconductor device, maintaining high impedance even in high-frequency operations, thus preventing noise-induced damage.

Implementation Method 1

forming capacitance between the n-type semiconductor layer, BOX layer, and p-type well, thereby increasing impedance and suppressing noise propagation

Methodology Applied
Scientific EffectCapacitance: Capacitance

Data Source

PatentUS10497654B2Semiconductor device
Publication Date: 2019.12.03 RENESAS ELECTRONICS CORP
  • US10497654B2 patent drawing
  • US10497654B2 patent drawing
  • US10497654B2 patent drawing

AI summary

A semiconductor device includes an annular seal ring formed in a seal ring region surrounding a circuit forming region. The seal ring includes a BOX layer, an n-type semiconductor layer, and an annular electrode portion comprised of multiple layers of wirings. The electrode portion is electrically connected with the n-type semiconductor layer through a plug electrode.