Seal Ring Interconnect Layout for RDL Corner Delamination
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Solution Overview
Problem
Existing seal rings in semiconductor integrated circuits (ICs) do not adequately protect the circuits from environmental conditions and processing damages, such as moisture ingress, ionic contamination, and mechanical stress during dicing.
Innovation Solution
A semiconductor structure with a seal ring region that includes a continuous metallization layer surrounding the circuit region, where the redistribution layer (RDL) and redistribution via (RV) are excluded from the corner regions to mitigate cracking and delamination risks.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a seal ring structure is formed around the circuit region to protect from environmental conditions and processing damages, then reliability is improved, but device complexity increases
Solution Approach 1:
The seal ring structure is integrated with the multi-layer interconnect system, allowing the same metallization layers to serve both as electrical interconnects and as protective seal structures. This multi-functionality reduces overall device complexity while maintaining reliability benefits.
Solution Approach 2:
The seal ring structure is formed by nesting multiple metallization layers within the interconnect system, where conductive layers are embedded within dielectric layers to create a protected, multi-layered seal structure that surrounds the circuit region.
2Reliability
If redistribution layer and via are included in corner regions to maintain continuity, then electrical connectivity is improved, but manufacturing precision deteriorates due to cracking and delamination risks
Solution Approach 1:
The seal ring structure is segmented by excluding RDL and RV from corner regions, creating distinct zones where the seal is continuous along edges but intentionally interrupted at corners. This segmentation prevents stress concentration and delamination while maintaining electrical connectivity through alternative pathways.
Solution Approach 2:
Different regions of the seal ring structure have different configurations: edge regions contain continuous RDL and RV for electrical connectivity, while corner regions exclude these elements to prevent manufacturing defects. This local differentiation optimizes both connectivity and manufacturing precision.
3Productivity
If geometry size is scaled down to increase functional density, then productivity is improved, but manufacturing precision worsens due to increased processing complexity
Solution Approach 1:
The seal ring structure utilizes the vertical dimension by forming multiple metallization layers at different heights within the interconnect system. This three-dimensional arrangement allows the seal to surround the circuit region in multiple layers, providing enhanced protection while maintaining compatibility with scaled-down planar geometries.
Data Source
AI summary
The present disclosure provides a semiconductor structure that includes a substrate having a circuit region and a seal ring region around the circuit region. The seal ring region includes a multi-layer interconnect to form a seal ring structure. And a redistribution layer is formed over the seal ring structure. The redistribution layer is formed on the edges of the seal ring region, and excluded from corner regions of the seal ring.