Seal-ring structure for 3D IC substrate protection

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Solution Overview

Problem

Conventional 3D IC formation methods, such as die-to-wafer bonding and through-silicon-vias, face challenges during the sawing process, where ions and cracks can diffuse into substrates, damaging integrated circuits due to the generation of ions and crack penetration along scribe lines.

Innovation Solution

Incorporation of a seal-ring structure around substrate regions, coupled with means such as via structures, through-silicon-via structures, trenches, or plugs, to prevent ion diffusion and crack penetration during die sawing, using materials like dielectric, barrier, and conductive materials to form a protective barrier.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If conventional sawing process is used to separate stacked wafers, then productivity is improved through 3D IC stacking, but ion diffusion and crack penetration damage the integrated circuits

Engineering Contradiction:
Improveintegration densityVSAvoidcircuit integrity
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

The seal-ring structure is formed around the substrate region before the sawing process occurs. This preliminary protective structure prevents ion diffusion and crack penetration during the subsequent sawing operation, allowing the substrate to be safely separated into individual dies without damaging the integrated circuits.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The seal-ring structure acts as an intermediary barrier between the harmful sawing process (ions and cracks) and the vulnerable integrated circuits on the substrate. This intermediate structure absorbs or blocks the harmful effects while allowing the desired separation to occur.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Quantity of substance

If deeper via structures are formed to connect stacked wafers, then device density increases, but the substrate becomes more vulnerable to crack penetration during sawing

Engineering Contradiction:
Improvedevice densityVSAvoidsubstrate strength
Core Design Contradiction:
Quantity of substanceVSStrength

Solution Approach 1:

The seal-ring structure provides localized reinforcement around the substrate region containing the integrated circuits and via structures. Rather than requiring the entire substrate to be uniformly thick or strong, the protective seal-ring is placed specifically where needed to prevent crack penetration during sawing, allowing local optimization of strength where devices are located.

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The seal-ring structure effectively prevents ion diffusion and crack penetration into substrate regions, thereby protecting integrated circuits and ensuring the integrity of the stacked die structures during the sawing process, enhancing the reliability and density of 3D ICs.

Implementation Method 1

At least one means for substantially preventing ion diffusion into the substrate region is coupled with the seal-ring structure

Methodology Applied
Scientific EffectDiffusion barrier: Diffusion Barrier

Implementation Method 2

At least one means for substantially preventing ion diffusion into the substrate region is coupled with the seal-ring structure

Methodology Applied
Scientific EffectCrack propagation resistance: Fracture Mechanics

Data Source

PatentUS8749027B2Robust TSV structure
Publication Date: 2014.06.10 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US8749027B2 patent drawing
  • US8749027B2 patent drawing
  • US8749027B2 patent drawing

AI summary

A die includes a seal-ring structure below a substrate. The seal-ring structure is disposed around at least one substrate region. At least one means for substantially preventing ion diffusion into the substrate region. The at least one means is coupled with the seal-ring structure.