Sealed Bonded Structure With Closed Conductive Profile

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Solution Overview

Problem

Existing semiconductor device seals, such as those using adhesives like solder, are permeable to gases, which can damage sensitive integrated devices and affect performance, while alternative adhesives pose long-term reliability issues.

Innovation Solution

A bonded structure is formed with a conductive interface feature, such as a copper layer, and a nonconductive interface feature, such as silicon oxide, to create a sealed cavity that prevents gas permeation, using direct metal-to-metal bonding without adhesives, and a conductive structure extending around the integrated device to form an effectively closed profile.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If adhesive materials (such as solder) are used to seal the cavity, then the integrated device is sealed from the outside environs, but the adhesive is permeable to gases which can damage the device over time

Engineering Contradiction:
Improvesealing effectivenessVSAvoidgas permeation
Core Design Contradiction:
ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The patent removes the adhesive material from the bonding interface, extracting the harmful element that causes gas permeation. Direct metal-to-metal bonding is used instead, eliminating the permeable adhesive layer while maintaining the sealing function through the metallurgical bond between cap and substrate.

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The patent employs a composite bonding structure combining different metal layers with specific properties. The first and second metal layers form a metallurgical bond that provides both mechanical attachment and gas-tight sealing, leveraging the complementary properties of different materials to achieve hermetic sealing.

Inventive Principle:
Principle #40Composite materials

2Ease of manufacture

If wide metal lines are used for bonding, then direct metal-to-metal bonding is achieved, but dishing and inconsistent bonding occur

Engineering Contradiction:
Improvebonding processVSAvoidbonding consistency
Core Design Contradiction:
Ease of manufactureVSManufacturing precision

Solution Approach 1:

The patent applies different metal layers with specific local properties at the bonding interface. The first metal layer on the cap and second metal layer on the substrate are designed with particular compositions and thicknesses optimized for their respective roles, creating local quality variations that ensure consistent bonding across the interface without dishing.

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The structure effectively seals the integrated device from outside environs, reducing gas permeation and preventing damage, while avoiding issues like dishing and inconsistent bonding associated with wide metal lines.

Implementation Method 1

The first plurality of contact pads are directly bonded to the second plurality of contact pads along an interface structure without an intervening adhesive

Methodology Applied
Scientific EffectDirect metal-to-metal bonding: Welding

Implementation Method 2

The elongate conductive structure can provide an effectively closed profile around the integrated device

Methodology Applied
Scientific EffectPhysical containment: Physical Containment

Data Source

PatentUS12374641B2Sealed bonded structures and methods for forming the same
Publication Date: 2025.07.29 ADEIA SEMICONDUCTOR BONDING TECHNOLOGIES INC
  • US12374641B2 patent drawing
  • US12374641B2 patent drawing
  • US12374641B2 patent drawing

AI summary

A bonded structure is disclosed. The bonded structure includes a first element that has a front side and a back side that is opposite the front side. The first element has a first conductive pad and a first nonconductive field region at the front side of the first element. The bonded structure also includes a second element that has a second conductive pad and a second nonconductive field region at a front side of the second element. The second conductive pad is bonded to the first conductive pad along an interface structure. The bonded structure also includes an integrated device that is coupled to or formed with the first element or the second element. The bonded structure further includes an elongate conductive structure that extends from the back side of the first element to the interface structure. The elongate conductive structure provides an effectively closed profile around the integrated device.