Secondary Gate Driver for USB-PD FET Voltage Control

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Solution Overview

Problem

Existing USB power delivery systems face challenges in controlling the gate-source voltage and slew rate of provider FETs, leading to potential damage from electrostatic discharge and in-rush currents, particularly with the USB-PD specification's wide voltage supply range and limited gate driver capabilities.

Innovation Solution

A secondary-controlled flyback converter with a programmable gate-source clamp voltage and programmable slew rate control integrated on a secondary-side controller, enabling precise control of the gate-source voltage and slew rate of provider FETs, reducing the risk of damage and optimizing power delivery.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Power

If a wide voltage supply range is implemented according to USB-PD specification, then power delivery capability is improved, but the risk of electrostatic discharge damage and in-rush currents increases

Engineering Contradiction:
Improvepower delivery capabilityVSAvoidelectrostatic discharge damage and in-rush currents
Core Design Contradiction:
PowerVSObject-affected harmful factors

Solution Approach 1:

The gate driver circuit performs preliminary actions by pre-charging the FET gate through a controlled path before full power delivery, and by implementing soft-start functionality that gradually increases power delivery. This preliminary action prevents sudden in-rush currents and reduces electrostatic discharge damage risk.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The gate driver circuit acts as an intermediary between the power source and FET, controlling the gate-source voltage to modulate FET conductivity. This intermediary control prevents direct connection of high voltage to the FET, thereby reducing in-rush currents and electrostatic discharge damage while maintaining wide voltage supply range capability.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Adaptability or versatility

If external FETs are used with wide voltage range, then power delivery flexibility is improved, but control precision of gate-source voltage becomes more difficult

Engineering Contradiction:
Improvepower delivery flexibilityVSAvoidgate-source voltage control precision
Core Design Contradiction:
Adaptability or versatilityVSMeasurement precision

Solution Approach 1:

The gate driver circuit dynamically adjusts its output characteristics based on the connected FET's requirements and operating conditions. It implements programmable output impedance and adjustable voltage levels, allowing precise control adaptation to different external FETs while maintaining flexibility for wide voltage range power delivery.

Inventive Principle:
Principle #15Dynamics

Solution Approach 2:

The gate driver circuit changes its operating parameters (output voltage levels, impedance, slew rate) based on the specific FET being controlled and the power delivery requirements. This parameter adaptability enables precise gate-source voltage control across different FET types while maintaining power delivery flexibility.

Inventive Principle:
Principle #35Parameter changes

3Device complexity

If limited gate driver capabilities are used, then device complexity is reduced, but reliability under fault conditions deteriorates

Engineering Contradiction:
Improvegate driver capabilitiesVSAvoidreliability under fault conditions
Core Design Contradiction:
Device complexityVSReliability

Solution Approach 1:

The gate driver circuit incorporates self-service features including built-in fault detection, automatic protection mechanisms, and self-diagnostic capabilities. It can detect fault conditions (over-voltage, over-current, short-circuit) and automatically take protective actions without external intervention, maintaining reliability while keeping the overall device complexity manageable.

Inventive Principle:
Principle #25Self-service

Solution Approach 2:

The gate driver circuit implements feedback mechanisms that monitor FET operation and power delivery conditions. This feedback enables the driver to detect fault conditions and adjust its control signals accordingly, improving reliability under fault conditions while maintaining reasonable device complexity through integrated control logic.

Inventive Principle:
Principle #23Feedback

Data Source

PatentUS11316441B2Controlled gate-source voltage N-channel field effect transistor (NFET) gate driver
Publication Date: 2022.04.26 INFINEON TECHNOLOGIES AMERICAS CORP
  • US11316441B2 patent drawing
  • US11316441B2 patent drawing
  • US11316441B2 patent drawing

AI summary

Controlling gate-source voltage with a gate driver in a secondary-side integrated circuit (IC) controller for a secondary-controlled AC-DC converter is described. In an example embodiment, the gate driver is configured to programmably control the gate-source voltage and the slew rate of a secondary-side provider field effect transistor (FET) in the converter.