Sectional EUV Collector Structure for Tin Buildup Control
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Solution Overview
Problem
The challenge of scaling down lithography collectors in advanced technology nodes is exacerbated by deformation due to increased size, tin contamination, and high manufacturing costs, which affect EUV light focus and throughput in semiconductor manufacturing.
Innovation Solution
A sectional collector with a hierarchical structure featuring multiple collector sections with gaps between them, allowing for improved air flow and reduced tin buildup, while maintaining focus and enhancing throughput.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the collector size is increased to improve EUV light collection efficiency, then the collection efficiency is improved, but deformation occurs due to the increased size
Solution Approach 1:
The collector is divided into multiple smaller collector sections arranged in a hierarchical structure rather than using a single large monolithic collector. This segmentation allows each section to maintain structural integrity and optical precision while collectively providing the large aperture area needed for high EUV light collection efficiency.
2Productivity
If the collector size is increased to improve EUV light collection efficiency, then the collection efficiency is improved, but manufacturing costs increase
Solution Approach 1:
Dividing the collector into multiple standardizable sections enables modular manufacturing, where sections can be produced using similar processes and then assembled. This reduces tooling costs, allows for economies of scale in section production, and simplifies quality control compared to manufacturing a single large custom collector.
Solution Approach 2:
The hierarchical arrangement of collector sections allows smaller sections to be nested within or arranged around central sections, creating a compact yet large-aperture structure. This nested configuration reduces the overall system footprint and manufacturing complexity while maintaining the large effective collecting area.
3Productivity
If the collector size is increased to improve EUV light collection efficiency, then the collection efficiency is improved, but tin contamination increases
Solution Approach 1:
By dividing the large collector into multiple smaller sections with spacing between them, the design reduces the continuous surface area exposed to tin plasma, thereby reducing total tin contamination accumulation. The segmented structure also allows for localized cleaning or replacement of contaminated sections without affecting the entire collector.
Solution Approach 2:
The design extracts or removes the problematic continuous large surface and replaces it with discrete separated sections. This extraction of the continuous surface geometry reduces the accumulation of tin contamination while maintaining the optical collecting function through the distributed arrangement of sections.
4Productivity
If the collector size is increased to improve EUV light collection efficiency, then the collection efficiency is improved, but air flow problems exacerbate tin buildup
Solution Approach 1:
The segmented collector design creates gaps and channels between individual collector sections that facilitate improved air flow through the collector region. This enhanced air flow prevents stagnation and reduces tin contamination buildup by actively removing contaminated air, thereby resolving the air flow problem associated with large monolithic collectors.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The sectional collector design improves EUV light collection efficiency, reduces manufacturing costs, and enhances wafer per day throughput by preventing deformation and tin contamination.
Implementation Method 1
a light source includes a droplet generator configured to generate a droplet, a laser source configured to emit at least one laser pulse toward the droplet, and a sectional collector configured to reflect radiation generated by the droplet toward the illumination optics
Data Source
AI summary
A method includes: depositing a mask layer over a substrate; directing first radiation reflected from a central collector section of a sectional collector of a lithography system toward the mask layer according to a pattern; directing second radiation reflected from a peripheral collector section of the sectional collector toward the mask layer according to the pattern, wherein the peripheral collector section is vertically separated from the central collector section by a gap; forming openings in the mask layer by removing first regions of the mask layer exposed to the first radiation and second regions of the mask layer exposed to the second radiation; and removing material of a layer underlying the mask layer exposed by the openings.