Sectioned Active Region Memory Cells for Temperature Uniformity
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Solution Overview
Problem
Multiple-Time-Programmable non-volatile memory cell arrays face challenges in achieving temperature uniformity across memory cells due to high operational voltages, which can lead to electrical defects and reduced data recording accuracy.
Innovation Solution
A structure and method for forming a non-volatile memory cell array with a substrate having an active region with specific fin and gate structures, including trench isolation and epitaxially grown semiconductor materials, to enhance heat sinking and temperature uniformity by varying the length and arrangement of fins and gate structures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If high operational voltages are used in Multiple-Time-Programmable memory, then statistical margins for recording bits of data are improved, but temperature uniformity across the cell array deteriorates and electrical defects increase
Solution Approach 1:
The active region is divided into multiple independently controllable sections (first section with first length, second section with second length less than first length). Each section can have different operational characteristics, allowing temperature control in the second section to compensate for hot spots while maintaining high voltage operation in other sections for adequate statistical margins.
Solution Approach 2:
Different sections of the active region are given different length dimensions to create local variations in thermal characteristics. The second section with reduced length has different thermal properties compared to the first section, enabling localized temperature management to achieve uniformity across the array while maintaining high operational voltages where needed.
2Measurement precision
If high operational voltages are used in Multiple-Time-Programmable memory, then statistical margins for recording bits of data are improved, but electrical defects from gate dielectric breakdown and electromigration increase
Solution Approach 1:
The active region is segmented into multiple sections with different length dimensions. This segmentation allows different voltage levels to be applied to different sections, enabling high voltage operation in sections where it provides necessary statistical margins while reducing voltage in sections where it would cause excessive electrical defects, thus improving overall reliability.
Solution Approach 2:
Different sections are designed with different length characteristics to create local variations in electrical stress distribution. This allows optimized voltage assignment where high voltage is applied only where statistically necessary, reducing gate dielectric breakdown and electromigration defects in other sections, thereby improving reliability without sacrificing data recording accuracy.
3Ease of manufacture
If uniform fin and gate structure lengths are used across the active region, then manufacturing is simplified, but temperature uniformity across memory cells deteriorates
Solution Approach 1:
The active region is segmented into multiple sections with different length dimensions (first section with first length, second section with second length). This segmentation enables different thermal characteristics in different regions, allowing temperature uniformity to be achieved across the array while maintaining manufacturing feasibility through standardized fabrication processes for each section type.
Solution Approach 2:
Different sections are designed with different length dimensions to create local thermal variations that compensate for heat generation patterns. The second section with reduced length has different thermal properties compared to the first section, enabling localized temperature management to achieve uniformity across the array while maintaining ease of manufacture through systematic design rules.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed solution improves temperature uniformity and reduces electrical defects, enhancing the operational reliability and data recording accuracy of the memory cell array.
Implementation Method 1
A structure and method for forming a non-volatile memory cell array with a substrate having an active region with specific fin and gate structures, including trench isolation and epitaxially grown semiconductor materials, to enhance heat sinking and temperature uniformity
Implementation Method 2
A Multiple-Time-Programmable memory relies on self-heating via Joule heating to reduce capture and emission lifetimes so that programming and erasing of stored electrical charges can be achieved within a reasonable timescale
Data Source
AI summary
Structures for an array of non-volatile memory cells and methods of forming a structure for an array of non-volatile memory cells. An active region of a substrate includes a first section having a side edge and a second section extending laterally from the side edge. The first section of the active region has a first length dimension in a direction parallel to the first side edge. The second section has a second length dimension in the direction parallel to the first side edge. The second length dimension is less than the first length dimension. A fin is positioned on the substrate in the second section of the active region. A gate structure extends over the fin and the second section of the active region.