Sedimented Phosphor Conversion Layer for LED Thermal Dissipation
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Solution Overview
Problem
Existing methods for producing optoelectronic components face challenges in effectively dissipating heat generated by phosphor particles to the semiconductor chip, leading to thermal stress on the matrix material and limited heat dissipation.
Innovation Solution
A method involving the introduction of a liquid matrix material with phosphor particles into a cavity, sedimentation of the particles onto the semiconductor chip, and curing of the matrix material to form a conversion layer in direct contact with the chip, allowing for effective heat dissipation and preventing lateral emission of primary light.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Length of stationary object
If phosphor particles are introduced into a large lens arranged above the semiconductor chip, then the phosphor particles are positioned relatively far away from the semiconductor chip, but the thermal properties become disadvantageous since heat can be dissipated only to a limited extent to the semiconductor chip and the silicone becomes brittle
Solution Approach 1:
The patent applies local quality by creating a conversion layer with high phosphor particle concentration directly on the semiconductor chip surface, while the surrounding potting material has low or no phosphor particles. This localized arrangement ensures that the region requiring heat dissipation (at the chip interface) has optimal thermal contact, while other regions serve different functions like light guidance or protection.
2Quantity of substance
If volume potting with homogeneous phosphor particle distribution is used, then the phosphor particles are distributed throughout the matrix material, but the high thermal stress of the matrix material owing to heat generated in the phosphor particles is disadvantageous
Solution Approach 1:
The patent segments the phosphor particle distribution into distinct regions: a conversion layer with high concentration directly on the semiconductor chip, and surrounding potting material with low or zero phosphor content. This segmentation separates the heat generation function from the structural encapsulation function, reducing thermal stress on the overall matrix material while maintaining effective wavelength conversion at the chip interface.
3Device complexity
If phosphor particles are kept at average distance from the semiconductor chip, then the structure is simplified, but sufficient heat dissipation to the semiconductor chip cannot be ensured
Solution Approach 1:
The patent applies preliminary action by first forming a conversion layer with high phosphor concentration directly on the semiconductor chip surface before applying the surrounding potting material. This preliminary arrangement ensures optimal thermal contact and heat dissipation pathway is established from the start, allowing the chip to effectively absorb heat generated by the phosphor particles in direct contact with it.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances thermal conductivity by ensuring direct contact between the conversion layer and the semiconductor chip, effectively dissipating heat and improving color homogeneity and thermal properties of the optoelectronic component.
Implementation Method 1
The phosphor particles convert short-wave primary light into longer-wave secondary light, for example, yellow light
Implementation Method 2
Heat produced in the phosphor particles during operation of the optoelectronic component (so-called Stokes shift)
Implementation Method 3
sedimenting the phosphor particles in the matrix material
Data Source
AI summary
A method of producing an optoelectronic component includes providing a cavity; introducing a liquid matrix material with phosphor particles distributed therein into the cavity; introducing a semiconductor chip into the matrix material; sedimenting the phosphor particles in the matrix material; and curing the matrix material, wherein a conversion layer including phosphor particles is produced, said conversion layer being arranged on the semiconductor chip.