Seed Layer for Silicon Oxide Film on Tungsten
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The formation of a silicon oxide film on tungsten or tungsten oxide films is hindered by a long incubation time, resulting in thinner films and unintended oxidation of tungsten due to direct contact with oxidizing agents during the initial stages of film formation.
Innovation Solution
A film-forming method involving the formation of a seed layer on the tungsten or tungsten oxide film using an aminosilane-based gas, followed by atomic layer deposition or molecular layer deposition with silicon material gases and oxidizing agents to reduce incubation time and prevent further tungsten oxidation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If direct oxidation method is used to form silicon oxide film on tungsten film, then the film formation process is simple, but the incubation time is long and film thickness is insufficient
Solution Approach 1:
A seed layer is formed on the tungsten film surface before the main oxidation process. This preliminary layer provides active sites for silicon adsorption, enabling the subsequent silicon oxide film to grow immediately without requiring a long incubation period. The seed layer preparation is the preliminary action that eliminates the time loss in the main oxidation process.
2Ease of manufacture
If direct oxidation method is used to form silicon oxide film on tungsten film, then the process is straightforward, but tungsten is further oxidized forming unwanted tungsten oxide film
Solution Approach 1:
The seed layer acts as an intermediary between the tungsten film and the oxidizing environment. It provides a protective function that prevents direct contact between oxygen and the tungsten film, thereby avoiding unwanted tungsten oxidation. The seed layer mediates the interaction, allowing silicon oxide formation while protecting the underlying tungsten layer.
3Quantity of substance
If longer deposition time is used to increase silicon oxide film thickness, then film thickness increases, but production efficiency decreases
Solution Approach 1:
The seed layer is prepared in advance to create a surface that immediately supports silicon oxide growth. This preliminary preparation eliminates the incubation period, allowing the deposition process to proceed at full efficiency from the start. The result is faster film formation achieving the required thickness without extending the overall production time.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method significantly reduces incubation time and enhances the thickness of the silicon oxide film on tungsten or tungsten oxide surfaces, minimizing the formation of additional tungsten oxide layers and improving film uniformity in semiconductor devices.
Implementation Method 1
forming the seed layer on the tungsten film or the tungsten oxide film by supplying an aminosilane-based gas to a surface of the tungsten film or the tungsten oxide film
Implementation Method 2
heating the object to be processed; and forming the seed layer on the tungsten film or the tungsten oxide film by supplying an aminosilane-based gas
Implementation Method 3
forming a silicon oxide film on the seed layer
Data Source
AI summary
A film-forming method includes forming a tungsten film or a tungsten oxide film on an object to be processed, forming a seed layer on the tungsten film or the tungsten oxide film, and forming a silicon oxide film on the seed layer, wherein the seed layer formed on the tungsten film or the tungsten oxide film is formed by heating the object to be processed and supplying an aminosilane-based gas to a surface of the tungsten film or the tungsten oxide film.