Seed Layer Stack for Magnetic Tunnel Junctions

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Solution Overview

Problem

Current magnetic tunnel junctions (MTJs) face challenges in achieving high thermal stability and perpendicular magnetic anisotropy due to rough seed layers, which degrade magnetic properties and allow Ta diffusion from the bottom electrode, affecting the performance of memory devices like MRAM.

Innovation Solution

A seed layer stack comprising a laminated structure with high resputtering rate elements like Mg, Al, and low resputtering rate NiX layers, topped with NiCr, which reduces surface roughness and enhances diffusion resistance, promoting a face-centered cubic crystal structure and improving thermal stability in the reference layer.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If a conventional seed layer is used, then the crystal growth in the reference layer is promoted, but the surface roughness increases and thermal stability decreases

Engineering Contradiction:
Improvecrystal growth uniformityVSAvoidthermal stability
Core Design Contradiction:
Manufacturing precisionVSStability of the object's composition

Solution Approach 1:

The seed layer is divided into multiple sub-layers with different materials and functions: a first seed layer (Ta/Ru laminate) for crystal structure promotion and diffusion barrier, and a second seed layer (NiCr) for surface smoothing. This segmentation allows each layer to optimize its specific function without compromising the other, resolving the contradiction between crystal growth promotion and surface roughness control.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The invention uses composite material structures: Ta/Ru laminated composite in the first seed layer for enhanced diffusion resistance and crystal promotion, and NiCr composite in the second seed layer for surface smoothing. These composite structures provide properties that single materials cannot achieve alone, simultaneously improving crystal growth and reducing surface roughness.

Inventive Principle:
Principle #40Composite materials

2Device complexity

If a single-layer seed layer is used, then the structure is simple, but the diffusion resistance and surface uniformity cannot be simultaneously optimized

Engineering Contradiction:
Improveseed layer structureVSAvoiddiffusion resistance
Core Design Contradiction:
Device complexityVSReliability

Solution Approach 1:

The seed layer is segmented into functionally distinct layers: the first seed layer handles diffusion barrier and crystal promotion, while the second seed layer handles surface smoothing. This functional segmentation allows optimization of reliability without excessive complexity, as each layer has a specific role.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The first seed layer (Ta/Ru laminate) serves multiple functions: it acts as a diffusion barrier against Ta migration, promotes FCC crystal structure formation, and provides a template for subsequent layers. This multi-functionality reduces the need for additional layers, balancing complexity and reliability.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The seed layer stack enhances thermal stability and perpendicular magnetic anisotropy, leading to improved data retention and reproducible tunnel barrier properties, while preventing Ta migration and maintaining high magnetoresistive ratios.

Implementation Method 1

A seed layer stack and method of forming the seed layer stack are disclosed that has a smooth top surface with a reduced peak to peak roughness

Methodology Applied
Scientific EffectSputtering: Sputtering

Implementation Method 2

promotes a face centered cubic (FCC) texture in the reference layer

Methodology Applied
Scientific EffectEpitaxy: Epitaxy

Implementation Method 3

good diffusion resistance to prevent materials such as Ta from the bottom electrode (BE) or an underlayer from migrating to the tunnel barrier

Methodology Applied
Scientific EffectDiffusion barrier: Diffusion Barrier

Data Source

PatentUS9673385B1Seed layer for growth of <111> magnetic materials
Publication Date: 2017.06.06 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US9673385B1 patent drawing
  • US9673385B1 patent drawing
  • US9673385B1 patent drawing

AI summary

A seed layer stack with a smooth top surface having a peak to peak roughness of about 0.5 nm over a range of 100 nm is formed by sputter depositing an X layer such as Mo on a Ni layer where the X layer has one or both of a larger bond energy and a greater atomic number than Ni. A (Ni/X)m laminate is formed and then an uppermost NiCr seed layer is deposited to enhance perpendicular magnetic anisotropy (PMA) in an overlying ferromagnetic layer. A <111> NiCr crystal structure promotes <111> texture in the ferromagnetic layer. X layers serve as a diffusion barrier to Ta migration from a bottom electrode and have good lattice matching with the adjoining Ni layer and uppermost NiCr layer. As a result of the smooth seed layer stack in a magnetic tunnel junction (MTJ), MTJ properties are improved and more reproducible.