Silicon/Perovskite Tandem Cell Interface Layers for Easier Tunneling
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Solution Overview
Problem
Perovskite laminated cells in the prior art suffer from low open circuit voltage and low conversion efficiency due to lattice mismatch between the N-type doped amorphous silicon layer and the hole transport layer, or between the P-type doped amorphous silicon layer and the electron transport layer, leading to difficult tunneling.
Innovation Solution
Incorporation of a seed crystal silicon layer and a tunneling layer, such as a P-type doped microcrystalline silicon oxide or N-type doped microcrystalline silicon oxide layer, between the silicon bottom cell and the perovskite top cell to facilitate carrier movement and improve tunneling efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If perovskite/silicon tandem solar cells are fabricated using sequential deposition, then the manufacturing process can be simplified, but the interface quality between perovskite and silicon substrates deteriorates due to residual organic solvents
Solution Approach 1:
The patent applies preliminary action by performing plasma treatment on the silicon substrate before perovskite deposition. This pre-treatment removes residual organic solvents and activates the substrate surface, creating an optimized interface that prevents subsequent degradation while maintaining the simplicity of sequential deposition.
Solution Approach 2:
The patent changes the physical-chemical parameters of the substrate surface through plasma treatment. The plasma process modifies surface energy, roughness, and chemical composition, transforming the substrate from a state with residual solvents to an activated state with improved interfacial properties for perovskite formation.
2Reliability
If conventional plasma treatment methods are used, then surface activation can be achieved, but the treatment time is excessive and productivity is reduced
Solution Approach 1:
The patent applies local quality by using a dielectric barrier discharge plasma source that generates highly reactive species concentrated at the substrate surface. This localized plasma generation achieves effective surface activation in a short time by concentrating reactive oxygen and nitrogen species exactly where needed, rather than using conventional bulk plasma methods.
Solution Approach 2:
The patent replaces conventional thermal or chemical surface treatment methods with plasma-based surface activation. The dielectric barrier discharge plasma source uses electrical fields to generate reactive species that chemically modify the substrate surface without requiring high temperatures or long exposure times, thereby improving both quality and speed.
3Stability of the object's composition
If low-temperature processing is used for perovskite fabrication, then material stability is improved, but complete removal of residual solvents becomes difficult
Solution Approach 1:
The patent introduces plasma as an intermediary between the perovskite layer and substrate. The plasma treatment creates an intermediate surface layer that is free of residual solvents and has enhanced surface properties, allowing complete solvent removal without requiring high-temperature processing that would destabilize the perovskite material.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enhances open circuit voltage and conversion efficiency of the silicon/perovskite tandem solar cell by accommodating doping elements and reducing defect states, thereby improving tunneling performance.
Implementation Method 1
a dielectric barrier discharge plasma source comprising a pair of electrodes spaced apart from each other with a dielectric layer interposed therebetween, the dielectric barrier discharge plasma source being configured to generate a plasma between the pair of electrodes
Implementation Method 2
the dielectric barrier discharge plasma source being configured to generate a plasma between the pair of electrodes, wherein a treatment is performed on the substrate using the dielectric barrier discharge plasma source
Implementation Method 3
Silicon/perovskite laminated solar cell and preparation method therefor
Data Source
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AI summary
The present disclosure relates to a silicon/perovskite tandem solar cell and a preparation method thereof and belongs to the technical field of perovskite laminated cells. The silicon/perovskite tandem solar cell includes a silicon bottom cell and a perovskite top cell, in which a seed crystal silicon layer and a tunneling layer are sequentially arranged between a surface of the silicon bottom cell and a bottom surface of the perovskite top cell, the seed crystal silicon layer being adjacent to the silicon bottom cell, and the tunneling layer being adjacent to the perovskite top cell. Here, the seed crystal silicon layer is an amorphous silicon layer, and the tunneling layer is a doped microcrystalline silicon oxide layer. The cell facilitates the tunneling between the silicon bottom cell and the perovskite top cell, thereby improving the open circuit voltage and the conversion efficiency of the cell.