Silicon-Perovskite Tandem Cell Interface Layers for Voltage Gain

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Solution Overview

Problem

Perovskite tandem cells in prior art suffer from low open circuit voltage and conversion efficiency due to lattice mismatch between the N-type doped amorphous silicon layer and the hole transport layer, or between the P-type doped amorphous silicon layer and the electron transport layer.

Innovation Solution

A silicon/perovskite tandem solar cell is designed with a seed crystal silicon layer and a tunneling layer sequentially arranged between the silicon bottom cell and the perovskite top cell. The seed crystal silicon layer is an amorphous silicon layer, and the tunneling layer is a doped microcrystalline silicon oxide layer, a doped carbonized microcrystalline silicon layer, or a doped carbonized microcrystalline silicon oxide layer.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a conventional amorphous silicon layer is used between the silicon bottom cell and perovskite top cell, then the device complexity is reduced, but the open circuit voltage and conversion efficiency are low due to lattice mismatch and difficult tunneling

Engineering Contradiction:
Improveopen circuit voltageVSAvoidlayer structure complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The interface layer is segmented into multiple functional sub-layers: a seed crystal silicon layer (amorphous or microcrystalline) and a tunneling layer (doped microcrystalline silicon oxide or carbonized microcrystalline silicon). This segmentation allows each sub-layer to perform its specific function - the seed layer improves crystallinity while the tunneling layer facilitates carrier transport - thereby resolving the lattice mismatch problem and improving open circuit voltage without requiring a single complex material

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent employs composite material structures at the interface, combining amorphous silicon with microcrystalline silicon oxide or carbonized microcrystalline silicon. This composite approach leverages the amorphous nature of silicon for ease of deposition while incorporating crystalline phases to reduce lattice mismatch, and adds doped tunneling layers to enhance carrier transport, collectively improving open circuit voltage and conversion efficiency

Inventive Principle:
Principle #40Composite materials

2Productivity

If a conventional amorphous silicon layer is used between the silicon bottom cell and perovskite top cell, then the ease of manufacture is improved, but the conversion efficiency is low due to difficult tunneling

Engineering Contradiction:
Improveconversion efficiencyVSAvoiddeposition process complexity
Core Design Contradiction:
ProductivityVSEase of manufacture

Solution Approach 1:

The patent modifies the deposition parameters and material composition by introducing doped microcrystalline silicon oxide or carbonized microcrystalline silicon layers. By changing the material phase from purely amorphous to microcrystalline with specific doping concentrations, and adjusting deposition conditions to achieve the desired crystallinity and doping levels, the tunneling efficiency is enhanced while maintaining manufacturability through controlled parameter optimization

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The doped microcrystalline silicon oxide or carbonized microcrystalline silicon layer acts as an intermediary between the amorphous silicon seed layer and the perovskite top cell. This intermediate layer facilitates carrier tunneling by providing a suitable energy band alignment and reduced potential barrier, thereby improving conversion efficiency while the entire structure remains compatible with existing deposition processes

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The introduction of the seed crystal silicon layer and the tunneling layer facilitates better carrier tunneling, thereby enhancing the open circuit voltage and conversion efficiency of the silicon/perovskite tandem solar cell.

Implementation Method 1

the seed crystal silicon layer and the tunneling layer are sequentially arranged between a surface of the silicon bottom cell and a bottom surface of the perovskite top cell... facilitate carrier movement and improve crystallinity, thereby enhancing tunneling efficiency

Methodology Applied
Scientific EffectTunneling:

Data Source

PatentUS12213328B2Silicon/perovskite tandem solar cell and preparation method thereof
Publication Date: 2025.01.28 TONGWEI SOLAR ENERGY (CHENGDU) CO LID
  • US12213328B2 patent drawing
  • US12213328B2 patent drawing
  • US12213328B2 patent drawing

AI summary

The present disclosure relates to a silicon/perovskite tandem solar cell and a preparation method thereof and belongs to the technical field of perovskite tandem cells. The silicon/perovskite tandem solar cell includes a silicon bottom cell and a perovskite top cell, in which a seed crystal silicon layer and a tunneling layer are sequentially arranged between a surface of the silicon bottom cell and a bottom surface of the perovskite top cell, the seed crystal silicon layer being adjacent to the silicon bottom cell, and the tunneling layer being adjacent to the perovskite top cell. Here, the seed crystal silicon layer is an amorphous silicon layer, and the tunneling layer is a doped microcrystalline silicon oxide layer. The cell facilitates the tunneling between the silicon bottom cell and the perovskite top cell, thereby improving the open circuit voltage and the conversion efficiency of the cell.