Segmented Bipolar Transistor Collector for Current and Frequency Control
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Solution Overview
Problem
Existing electronic devices with bipolar transistors face limitations in current amplification and control, particularly in modulating the collector current and transition frequency without affecting the breakdown voltage.
Innovation Solution
The design includes a bipolar transistor with a conductive element surrounding the collector region, made of polysilicon, and a biasing pad coupled to it, allowing for voltage modulation between -5 V to 5 V independently of the base and emitter voltages, enabling precise control of current and frequency modulation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If a conventional bipolar transistor structure is used, then the device is simple to manufacture, but the ability to modulate collector current and transition frequency independently is limited
Solution Approach 1:
The collector region is divided into two separate regions (first collector region and second collector region) with the conductive element positioned between them. This segmentation allows independent control of collector current and transition frequency through separate biasing of the two regions, resolving the contradiction by enabling modulation capability while maintaining a manufacturable segmented structure
Solution Approach 2:
A conductive element (such as a polysilicon layer) is introduced as an intermediary between the two collector regions. This conductive element serves as a mediator that enables independent electrical control and modulation of the transistor parameters without requiring complete redesign of the entire device structure, thus adding adaptability while controlling complexity
2Ease of operation
If voltage is applied to modulate collector current, then current control is improved, but breakdown voltage may be affected
Solution Approach 1:
By segmenting the collector into two regions with separate biasing capabilities, the invention allows independent control of the collector current (through one region) while maintaining the breakdown voltage characteristics (through the other region). This segmentation enables current control without compromising breakdown voltage stability
Solution Approach 2:
Different regions of the collector are given different functional qualities: one region is optimized for current control while the other maintains breakdown voltage characteristics. This local differentiation allows simultaneous achievement of ease of operation for current control and reliability for breakdown voltage stability
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration allows for effective modulation of the collector current and transition frequency, maintaining the breakdown voltage, and enabling these adjustments throughout the device's lifetime.
Implementation Method 1
a bipolar transistor with a conductive element surrounding the collector region... allowing for voltage modulation between -5 V to 5 V independently of the base and emitter voltages, enabling precise control of current and frequency modulation
Data Source
AI summary
An electronic device includes a bipolar transistor. A collector of the bipolar transistor is formed by first and second regions. The second region is located between the first region and a base of the bipolar transistor. A conductive element at least partially surrounds and is insulated from the second region. The conductive element is located between the first region and the base.