Segmented Bottom Electrode Structure for Etch-Resistant Capacitors
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Solution Overview
Problem
As the integration density of semiconductor devices increases, they often suffer from deterioration in electrical performance and reduced reliability.
Innovation Solution
The semiconductor device includes a bottom electrode with a first portion and a second portion, a supporting pattern between adjacent bottom electrodes, a top electrode covering the bottom electrode and supporting pattern, and a dielectric layer between these components. The second portion of the bottom electrode is designed to prevent damage during etching processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the bottom electrode is made as a single continuous structure to ensure electrical connectivity, then electrical conductivity is improved, but the electrode becomes vulnerable to damage during etching processes
Solution Approach 1:
The bottom electrode is divided into multiple segments (first bottom electrode portion and second bottom electrode portion) separated by a gap. This segmentation allows the electrode to withstand etching processes better while maintaining electrical connectivity through conductive material filling the gap between segments.
Solution Approach 2:
The bottom electrode structure is pre-configured with separated portions before the etching process. This preliminary segmentation prevents damage during subsequent etching operations, as the gap between portions protects the electrode from etching-induced damage.
2Productivity
If the integration density is increased to improve device functionality, then device capabilities are enhanced, but electrical performance deteriorates
Solution Approach 1:
The segmented bottom electrode structure allows for higher integration density while maintaining electrical performance. The gaps between segments can be precisely controlled and filled with conductive material, enabling closer spacing of electrodes without sacrificing electrical connectivity or performance.
3Reliability
If the bottom electrode top end is positioned at the same height as the supporting pattern upper surface to maximize electrode area, then capacitance is improved, but the electrode becomes exposed and vulnerable to damage
Solution Approach 1:
By segmenting the bottom electrode and positioning the top ends of the portions below the supporting pattern upper surface, the electrode structure avoids exposure to damaging factors while maintaining effective capacitance through the gap-filling conductive material.
Solution Approach 2:
The gap between the bottom electrode portions is filled with conductive material that acts as an intermediary, maintaining electrical connectivity and capacitance function while protecting the electrode structure from exposure and damage.
Data Source
AI summary
A semiconductor device includes; a bottom electrode on a substrate, a supporting pattern between the bottom electrode and an adjacent bottom electrode, a top electrode covering the bottom electrode and the supporting pattern, and a dielectric layer between the bottom electrode and the top electrode and between the supporting pattern and the top electrode. The bottom electrode may include a first portion including a seam and a second portion on the first portion, a top end of the second portion may be disposed at a height lower than an upper surface of the supporting pattern, and a portion of a bottom end of the second portion may be exposed to the seam.