Segmented Channel Semiconductor Structure for Heat Suppression
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Solution Overview
Problem
High output, high frequency semiconductor devices used in 5G millimeter-wave communication systems face challenges with heat generation due to Joule heat, leading to increased electrical resistance and degraded device characteristics, particularly in densely packed channels.
Innovation Solution
The semiconductor device incorporates a channel layer and a barrier layer with non-conductive regions formed at specific intervals opposing the gate electrode, reducing current density and heat concentration without increasing device size by inhibiting current flow through these regions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If channels are densely packed to increase device integration, then device productivity and compactness are improved, but heat generation concentration increases causing device characteristics to deteriorate
Solution Approach 1:
The channel layer is segmented by forming non-conductive regions that divide the continuous channel into multiple separate channels. This segmentation allows heat to be distributed across multiple isolated regions rather than concentrated in a single continuous channel, enabling higher device integration while controlling heat generation concentration.
Solution Approach 2:
Non-conductive regions are strategically formed at specific positions within the channel layer to create local variations in electrical conductivity. These localized non-conductive regions serve as heat isolation barriers that prevent heat accumulation in densely packed channel areas, maintaining device performance while enabling compact integration.
2Temperature
If non-conductive regions are formed in the channel layer to reduce heat concentration, then temperature control is improved, but device complexity increases
Solution Approach 1:
The non-conductive regions are formed by integrating additional layers (such as insulating layers or barrier layers) into the existing channel structure. This merging approach allows heat management functionality to be incorporated without requiring completely separate cooling systems or complex thermal management components, thus controlling maximum temperature while limiting complexity increase.
3Temperature
If current density is reduced to suppress heat generation, then temperature control is improved, but power output decreases
Solution Approach 1:
Instead of reducing current density uniformly across the entire channel, the invention introduces non-conductive regions that create a multi-dimensional current distribution pattern. Current is redirected around the non-conductive regions through alternative pathways in the channel layer, maintaining overall current flow and power output while distributing heat generation more evenly across multiple localized regions.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively suppresses heat generation and maintains device performance by reducing current density and maximum temperature, thereby preventing degradation of characteristics in high output, high frequency semiconductor devices.
Implementation Method 1
As a temperature of a channel increases, an electrical resistance of the channel and peripheral wiring lines increases, and device characteristics deteriorate
Implementation Method 2
a heat generation due to Joule heat becomes a problem
Data Source
AI summary
A semiconductor device according to an embodiment of the present disclosure includes a channel layer and a barrier layer in this order on a substrate. The semiconductor device further includes a gate electrode, a source electrode, and a drain electrode that are formed on the substrate via the channel layer and the barrier layer. The gate electrode, the source electrode, and the drain electrode extend in a first direction. The channel layer or the barrier layer has a plurality of non-conductive regions formed at positions opposed to the gate electrode and arranged side by side, with a predetermined interval interposed therebetween, in an extending direction of the gate electrode. The non-conductive regions inhibit a current from flowing to the channel layer.