Segmented CoFeB Sputtering Target to Prevent MRAM Cracking

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Solution Overview

Problem

Traditional sputtering targets made of ferromagnetic alloys like CoFeB are brittle and prone to cracking, especially with high boron content, leading to particle generation and contamination during the sputtering process, which causes defects and reliability issues in MRAM devices.

Innovation Solution

The formation of sputtering targets with a plurality of sub-targets bonded to a back plate, where each sub-target is characterized by a size below a threshold target size to prevent cracking, using a method that includes pressing and sintering powders of ferromagnetic materials like CoFeB and bonding them to a back plate, thereby reducing the likelihood of crack formation during sputtering operations.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If traditional sputtering targets with high boron content are used, then the magnetic properties for MRAM are improved, but the targets become brittle and prone to cracking

Engineering Contradiction:
Improvemagnetic memory performanceVSAvoidtarget structural integrity
Core Design Contradiction:
ReliabilityVSStrength

Solution Approach 1:

The sputtering target is divided into multiple segments or zones with different boron concentrations. The core region contains high boron content for optimal magnetic properties, while the outer regions have lower boron content to provide structural strength and prevent cracking. This segmentation allows the target to maintain both magnetic performance and structural integrity simultaneously.

Inventive Principle:
Principle #1Segmentation

2Manufacturing precision

If high boron content ferromagnetic alloys are used in sputtering targets, then the magnetic tunnel junction performance is enhanced, but particle generation and contamination increase due to target cracking

Engineering Contradiction:
Improvemagnetic layer qualityVSAvoidparticle contamination
Core Design Contradiction:
Manufacturing precisionVSObject-generated harmful factors

Solution Approach 1:

By segmenting the target with varying boron content, the high-boron core provides excellent magnetic layer quality while the low-boron outer regions prevent cracking and reduce particle generation during sputtering operations.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Different regions of the sputtering target are assigned different local qualities - the core region has high boron content optimized for magnetic properties, while the outer regions have lower boron content optimized for structural stability. This local quality differentiation ensures high magnetic layer quality without excessive particle contamination.

Inventive Principle:
Principle #3Local quality

3Reliability

If uniform high boron content is maintained throughout the sputtering target, then magnetic properties are optimized, but the target becomes more susceptible to crack formation

Engineering Contradiction:
Improvemagnetic memory cell performanceVSAvoidtarget compositional uniformity
Core Design Contradiction:
ReliabilityVSStability of the object's composition

Solution Approach 1:

The target composition is segmented into high-boron and low-boron regions, sacrificing overall compositional uniformity to prevent cracking. The high-boron core maintains magnetic performance while the low-boron outer regions provide crack resistance.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The target exhibits local quality variations in boron content - high boron in the core for magnetic performance and low boron at the edges for structural stability. This local differentiation resolves the contradiction between magnetic optimization and crack prevention.

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach reduces or eliminates target crack formation, minimizing particle contamination and enhancing yield and reliability by ensuring that sputtering targets do not crack, even with high boron content, thus improving the sputtering process for MRAM devices.

Implementation Method 1

a physical vapor deposition (PVD) process, also known as a sputter deposition or sputtering, deposits thin films by using energetic particles to bombard a target source into the gas phase and onto a substrate

Methodology Applied
Scientific EffectSputtering: Sputtering

Implementation Method 2

pressing and sintering powders of ferromagnetic materials like CoFeB and bonding them to a back plate

Methodology Applied
Scientific EffectSintering: Sintering

Data Source

PatentUS12089506B2Target for MRAM
Publication Date: 2024.09.10 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US12089506B2 patent drawing
  • US12089506B2 patent drawing
  • US12089506B2 patent drawing

AI summary

A sputtering target structure includes a back plate characterized by a first size, and a plurality of sub-targets bonded to the back plate. Each of the sub-targets is characterized by a size that is a fraction of the first size and is equal to or less than a threshold target size. Each sub-target includes a ferromagnetic material containing iron (Fe) and boron (B). Each of the plurality of sub-targets is in direct contact with one or more adjacent sub-targets.