Segmented Semiconductor Contact Structure for Leakage and Capacitance Control
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing semiconductor devices face challenges in achieving stable connections to conductive structures with improved electrical characteristics, which are essential for densely integrated and high-performance electronic devices.
Innovation Solution
The semiconductor device incorporates a contact structure with a conductive contact layer surrounded by a barrier layer and an air gap, along with spacer structures to reduce mutual interference and parasitic capacitance, enhancing electrical performance and reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If contact structures are made to connect conductive structures in densely integrated semiconductor devices, then electrical connections are established, but parasitic capacitance and leakage current increase
Solution Approach 1:
The contact structure is divided into multiple portions (first portion, second portion, third portion) with different configurations. The first portion has the barrier layer surrounding it, the second portion has the air gap surrounding it, and the third portion connects to the active region. This segmentation allows each portion to be optimized for its specific function, reducing overall parasitic capacitance while maintaining reliable electrical connection.
Solution Approach 2:
Different portions of the contact structure have different local characteristics: the first portion is surrounded by barrier layer material for protection, the second portion is surrounded by air gap for reduced capacitance, and the third portion directly contacts the active region. This local quality variation optimizes the balance between connection reliability and parasitic reduction in different regions of the same contact structure.
2Object-generated harmful factors
If spacer structures are added to reduce mutual interference between bitlines, then parasitic capacitance is reduced, but device complexity increases
Solution Approach 1:
The spacer structure is merged with the contact structure formation process. The spacer is formed on the bitline, and then the contact structure is formed on the spacer, combining two functional elements (spacing and contact) into an integrated structure. This reduces the number of separate manufacturing steps and simplifies the overall device architecture while still achieving parasitic capacitance reduction.
Data Source
AI summary
A semiconductor device includes; a substrate including an active region including a first region and a second region, a bitline extending in a first direction on the substrate and electrically connected to the first region of the active region, a spacer structure disposed on a side surface of the bitline, a contact structure disposed on a side surface of the spacer structure and electrically connected to the second region of the active region and a data storage structure disposed on the contact structure and electrically connected to the contact structure. The contact structure includes; a conductive contact layer including a first portion and a second portion disposed on the first portion, a barrier layer surrounding the first portion of the conductive contact layer, and an air gap surrounding the second portion of the conductive contact layer.