Segmented Control Electrodes in Semiconductor Devices
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Solution Overview
Problem
Current power semiconductor devices face challenges in reducing on-state conduction loss and turn-off switching loss, particularly due to the limitations in the design of control electrodes and their insulation in semiconductor devices like IGBTs.
Innovation Solution
The semiconductor device incorporates a unique arrangement of control electrodes, including a third control electrode positioned between the first and second control electrodes, with each electrode being electrically insulated from the semiconductor part by separate insulating films, allowing for independent biasing and optimized control of charge movement to minimize conduction and switching losses.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If conventional control electrode arrangements are used, then device structure is simpler, but on-state conduction loss and turn-off switching loss increase
Solution Approach 1:
The control electrode is divided into multiple independent control electrodes (first, second, and third control electrodes), each capable of independent biasing. This segmentation allows separate control of charge movement in different regions, enabling reduced on-state resistance and switching losses through optimized charge ejection without requiring a completely complex device structure.
2Ease of operation
If control electrodes are electrically insulated from semiconductor part, then independent control is achieved, but manufacturing precision requirements increase
Solution Approach 1:
Insulating films are introduced as intermediary elements between the control electrodes and the semiconductor part. These insulating films enable electrical insulation and independent control capability while being integrated into the existing semiconductor manufacturing process, thereby achieving the desired control independence without excessively stringent manufacturing precision requirements.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively reduces on-state resistance and switching losses by promoting efficient hole and electron ejection, thereby enhancing the performance of power semiconductor devices.
Implementation Method 1
The first control electrode is provided between the semiconductor part and the first electrode, the first control electrode being provided in the first trench and electrically insulated from the semiconductor part by a first insulating film
Data Source
AI summary
A semiconductor device includes first and second electrodes, a semiconductor part between the first and second electrodes, first to third control electrodes between the semiconductor part and the first electrode, first and second control terminals electrically connected respectively to the first and second control electrodes. The first to third control electrodes each are provided in a trench of the semiconductor part. The third control electrode is provided between the first and second control electrodes. The semiconductor part includes first and third layers of a first conductivity type, and second and fourth layers of a second conductivity type. The second layer is provided between the first layer and the first electrode. The third layer is selectively provided between the second layer and the first electrode. The fourth layer is provided between the first layer and the second electrode. The first electrode is electrically connected to the second and third layers.