Segmented Dielectric Structures for Capacitor Charge Storage and Response Time
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Solution Overview
Problem
Dielectric materials with high dielectric constants, used to increase integration density and electric flux density in integrated circuitry, tend to break down under intense electric fields and have slow response times, making them unsuitable for applications requiring both high charge storage and rapid response.
Innovation Solution
Dielectric structures are formed with different compositions along edges and interiors, allowing charge to primarily stay along edges, and utilizing a mixed phase portion with a high dielectric constant and a single phase portion with a lower dielectric constant, enabling CF-tunability to balance charge storage capacity and response time.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If dielectric materials with high dielectric constants are used to increase electric flux density and integration density, then charge storage capacity is improved, but response time becomes slow
Solution Approach 1:
The dielectric structure is segmented into multiple portions with different dielectric constants. The first portion has a higher dielectric constant than the second portion, allowing each segment to contribute differently to charge storage and response characteristics, thereby achieving both high charge storage capacity and fast response time simultaneously
Solution Approach 2:
Different portions of the dielectric structure are assigned different dielectric constants tailored to their specific functions. The first portion with higher dielectric constant optimizes charge storage, while the second portion with lower dielectric constant optimizes response speed, creating local quality variations that resolve the overall contradiction
2Quantity of substance
If dielectric materials with high dielectric constants are used to store large quantity of flux in small volume, then capacitance is improved, but dielectric breakdown resistance deteriorates
Solution Approach 1:
The dielectric structure divides the high electric field environment into multiple portions with different dielectric constants. The portion with lower dielectric constant experiences reduced electric field stress, improving breakdown resistance, while the overall structure maintains high electric flux density through the higher dielectric constant portion
Solution Approach 2:
The dielectric structure uses a composite of materials with different dielectric constants in a stacked configuration. This composite structure combines the high flux density capability of high-k materials with the breakdown resistance of lower-k materials, achieving both improved capacitance and reliability
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The dielectric structures achieve high capacitance while maintaining rapid response times, suitable for capacitors and other integrated circuit components, by engineering the composition and thickness of the mixed and single phase portions to optimize capacitance and response time.
Implementation Method 1
The dielectric constant (k) is the ratio of the permittivity of a substance to the permittivity of free space. It is an expression of the extent to which a material concentrates electric flux.
Implementation Method 2
Dielectric materials have numerous applications in integrated circuitry. For instance, dielectric materials may be incorporated into capacitors
Data Source
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AI summary
Some embodiments include dielectric structures. The structures include first and second portions that are directly against one another. The first portion may contain a homogeneous mixture of a first phase and a second phase. The first phase may have a dielectric constant of greater than or equal to 25, and the second phase may have a dielectric constant of less than or equal to 20. The second portion may be entirely a single composition having a dielectric constant of greater than or equal to 25. Some embodiments include electrical components, such as capacitors and transistors, containing dielectric structures of the type described above. Some embodiments include methods of forming dielectric structures, and some embodiments include methods of forming electrical components.