Segmented Diode Structure for Low-Leakage Thin Substrates
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Solution Overview
Problem
In advanced semiconductor technology nodes, the thinning of substrates for diodes and transistors leads to challenges in maintaining current integrity and reducing leakage currents, particularly when backside metallization schemes are introduced, which can affect the performance and integration of diode-containing components in integrated circuits.
Innovation Solution
A diode-containing component with a specific configuration that includes semiconductor regions and dielectric regions of opposite conductivity types, separated by isolation portions, and a dummy gate structure, which reduces defects and enhances current flow while allowing integration with advanced integrated circuits, including those with backside metallization schemes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If substrate thinning is performed to integrate diodes with advanced MOSFET processes, then integration compatibility is improved, but current leakage increases and current integrity deteriorates
Solution Approach 1:
The substrate is segmented into multiple semiconductor regions (first semiconductor region, second semiconductor region, third semiconductor region) with alternating conductivity types, creating a structured path for current flow that maintains integrity despite substrate thinning
Solution Approach 2:
Different regions of the substrate are doped with different conductivity types (n-type, p-type) to create localized electrical properties that guide current flow and prevent leakage paths, with each region having optimized doping concentrations
2Device complexity
If backside metallization schemes are introduced, then routing congestion is reduced, but leakage current increases
Solution Approach 1:
Multiple intermediate semiconductor regions with alternating conductivity types are introduced between the anode and cathode, acting as mediators that force current to follow a controlled path through the substrate, preventing direct leakage paths to backside metallization
Solution Approach 2:
The current path is extended from a simple vertical path into a three-dimensional path through multiple alternating doped regions, increasing the effective length and resistance of leakage paths while maintaining compact device footprint
3Reliability
If multiple doped regions are created to reduce leakage, then current integrity is improved, but manufacturing complexity increases
Solution Approach 1:
The alternating doped regions are formed using preliminary ion implantation steps performed at different stages of the fabrication process, allowing each region to be precisely doped before subsequent processing steps
Solution Approach 2:
Different doping concentrations are applied to different regions (heavily-doped contact regions, lightly-doped intermediate regions) to optimize electrical performance while using standard semiconductor fabrication techniques
Data Source
AI summary
A semiconductor structure includes a base structure, a first portion, a second portion and a first stack. The first portion and the second portion are disposed on the base structure and are respectively made of a first semiconductor material and a second semiconductor material which has a conductivity type opposite to that of the first semiconductor material. The first stack is disposed on the base structure and between the first portion and the second portion. The first stack includes a plurality of first semiconductor regions and a plurality of first dielectric regions disposed to alternate with the first semiconductor regions, such that each of the first semiconductor regions and the first dielectric regions extends between the first portion and the second portion. The first semiconductor regions has a dopant concentration which is lower than that of each of the first portion and the second portion.