Segmented Drain Layout for ESD Protection in Initial-On Semiconductors
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Solution Overview
Problem
Conventional ESD protection components in semiconductor devices are ineffective for initial-on devices and increase layout area in ultra-high voltage devices, failing to provide adequate protection during electrostatic discharge events without occupying additional space.
Innovation Solution
The semiconductor device design includes a drain region divided into laterally separated drain segments, each electrically connected to a drain electrode through multiple drain contacts in parallel, enhancing ESD protection without increasing the device's layout area by spreading the current evenly across the drain region.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional ESD protection components are added to protect integrated circuits, then ESD protection capability is improved, but turn-on speed is slow and layout area increases
Solution Approach 1:
The patent combines the ESD protection function with the initial-on device itself, making the initial-on device serve dual purposes: normal operation and ESD protection. This is achieved by configuring the drain region with multiple laterally separated drain segments that are electrically connected in parallel through multiple drain contacts, allowing the device to provide ESD protection without requiring separate protection components.
Solution Approach 2:
The drain region is divided into multiple laterally separated drain segments, each connected to the drain electrode through separate drain contacts. This segmentation allows ESD current to be distributed across multiple parallel paths, improving ESD protection capability while maintaining the fast turn-on characteristics of the initial-on device.
2Reliability
If ESD protection components are added to ultra-high voltage devices, then ESD protection capability is improved, but layout area increases
Solution Approach 1:
The patent merges the ESD protection function into the existing initial-on device structure, eliminating the need for separate ESD protection components. The drain region's multiple laterally separated segments and their parallel connections provide ESD protection within the existing device footprint, preventing layout area expansion.
Solution Approach 2:
The initial-on device is designed to perform multiple functions: normal operational switching and ESD protection. The drain region configuration with multiple laterally separated segments and parallel drain contacts enables the device to handle both standard operations and ESD events, providing universal functionality without requiring additional components.
Data Source
AI summary
A semiconductor device includes a gate electrode disposed on a substrate. A source region and a drain region are disposed in the substrate and located on two sides of the gate electrode respectively. The drain region includes a plurality of drain segments that are laterally separated from each other. These drain segments have a first conductive type and the substrate has a second conductive type. A plurality of drain contacts is electrically connected to the drain segments. Each drain segment corresponds to at least one of these drain contacts. A drain electrode is electrically connected to these drain contacts. A source electrode is electrically connected to the source region.