Segmented DRAM Capacitor Structure for Higher Capacitance
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing semiconductor structures face challenges with small capacitor capacity, which affects the performance of Dynamic Random Access Memory (DRAM) devices.
Innovation Solution
A semiconductor structure is designed with first support columns and segmentation trenches on a substrate, forming capacitive assemblies that include a lower electrode layer, dielectric layer, and upper electrode layer, with insulation layers to connect adjacent capacitors in parallel, enhancing capacitance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If traditional capacitor structure is used, then device structure is simple, but capacitor capacity is small
Solution Approach 1:
The patent introduces segmentation trenches to divide the capacitor structure into multiple segments. Each capacitor is divided into a first capacitor and a second capacitor through the segmentation trench, allowing parallel connection of capacitors to increase total capacitance while maintaining manageable structural complexity through modular design
Solution Approach 2:
The patent utilizes three-dimensional space by forming electrode layers and dielectric layers in multiple stacked configurations. The lower electrode layer, dielectric layer, and upper electrode layer are arranged in vertical stacks, and multiple such stacks are connected in parallel through segmentation trenches, effectively increasing capacitance by utilizing the third dimension (vertical stacking) rather than only expanding horizontal area
2Quantity of substance
If capacitor capacity is increased, then DRAM performance is improved, but manufacturing complexity increases
Solution Approach 1:
The segmentation trench divides the capacitor into modular first and second capacitors that can be manufactured using standardized processes. The lower electrode layer, dielectric layer, and upper electrode layer are formed in systematic steps that can be replicated across multiple capacitors, making the increased capacitance structure manufacturable through repeatable fabrication processes
Solution Approach 2:
The patent merges multiple capacitor units (first capacitor and second capacitor) into a single integrated capacitive structure. The lower electrode layers of adjacent capacitors are electrically connected through the segmentation trench, combining multiple capacitor units into a larger capacitive assembly that achieves higher total capacitance while using unified manufacturing processes
Data Source
AI summary
The semiconductor structure includes a first capacitive structure located on a substrate and first support columns. A plurality of first support columns are disposed on the substrate in parallel and spaced apart from each other, and are located in a same plane parallel to the substrate. The first capacitive structure includes a first lower electrode layer, a first dielectric layer and a first upper electrode layer. The semiconductor structure further includes a plurality of first segmentation trenches. The first segmentation trenches divide the first capacitive structure into a plurality of capacitors. A first insulation layer is disposed between the corresponding first lower electrode layers of the adjacent capacitors. The corresponding first upper electrode layers of the adjacent capacitors are electrically connected to each other.